Wolfspeed 1200V 63A MOSFET Transistor C3M0032120K

SICFET N-CH 1200V 63A TO247-4L Product overview: C3M0032120K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 63A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 63A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120K can be used for catalog matching and distributor lookup.

N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-4L

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324547-C3M0032120K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Power Dissipation (Max): 283W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0032120K,1697-C3M0032120K
Base Product Number: C3M0032120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant

Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diodes. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Halogen free, RoHS compliant

Benefits

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch

SICFET N-CH 1200V 63A TO247-4L