Wolfspeed Single FETs, MOSFETs C3M0032120K

Description
N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-4L
Request a Quote Datasheet
Description
N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-4L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-C3M0032120K-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0032120K-ND
Single FETs, MOSFETs 1697-C3M0032120K-ND
N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-4L

N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Single FETs, MOSFETs - C3M0032120K - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0032120K
Single FETs, MOSFETs C3M0032120K
SICFET N-CH 1200V 63A TO247-4L

SICFET N-CH 1200V 63A TO247-4L

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0032120K - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0032120K
Silicon Carbide MOSFETs C3M0032120K
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diodes. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch

Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on the reliable 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diodes. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV motor drive
  • High voltage DC/DC converters
  • Switched mode power supplies
  • Load switch
Supplier's Site Datasheet
Singapore
1200V 63A MOSFET Transistor
278-C3M0032120K
1200V 63A MOSFET Transistor 278-C3M0032120K
SICFET N-CH 1200V 63A TO247-4L Product overview: C3M0032120K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 63A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 63A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120K can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 63A TO247-4L Product overview: C3M0032120K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 63A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 63A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120K can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324547-C3M0032120K - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324547-C3M0032120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324547-C3M0032120K
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324547-C3M0032120K Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 283W (Tc) Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-4 ECCN: EAR99 Fake Threat In the Open Market: 75 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0032120K,16 97-C3M0032120K Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: ROHS3 Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324547-C3M0032120K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Power Dissipation (Max): 283W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 75
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0032120K,1697-C3M0032120K
Base Product Number: C3M0032120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0032120K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0032120K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0032120K
SICFET N-CH 1200V 63A TO247-4L

SICFET N-CH 1200V 63A TO247-4L

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1.2kV 32mOHMS G3 SiC MOSFET

MOSFET 1.2kV 32mOHMS G3 SiC MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Richardson RFPD ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1697-C3M0032120K-ND C3M0032120K C3M0032120K 278-C3M0032120K 1324547-C3M0032120K C3M0032120K C3M0032120K
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Silicon Carbide MOSFETs 1200V 63A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 Tube TO-247; SOT3; TO-247-4 TO-247; TO-247-4
V(BR)DSS 1200 volts 1200 volts
IDSS 63000 milliamps
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