Wolfspeed Single FETs, MOSFETs C3M0021120D

Description
SICFET N-CH 1200V 100A TO247-3
Request a Quote Datasheet
Description
SICFET N-CH 1200V 100A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - C3M0021120D - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0021120D
Single FETs, MOSFETs C3M0021120D
SICFET N-CH 1200V 100A TO247-3

SICFET N-CH 1200V 100A TO247-3

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0021120D - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0021120D
Silicon Carbide MOSFETs C3M0021120D
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode) Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C] Easy to implement – MOSFET fully on at +15V gate drive High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Applications Solar energy systems EV-Charging Uninterruptible power supply (UPS) SMPS Motor Control and Drives Energy storage

Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

  • Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode)
  • Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
  • Easy to implement – MOSFET fully on at +15V gate drive
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Applications

  • Solar energy systems
  • EV-Charging
  • Uninterruptible power supply (UPS)
  • SMPS
  • Motor Control and Drives
  • Energy storage
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325245-C3M0021120D - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325245-C3M0021120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325245-C3M0021120D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325245-C3M0021120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Power Dissipation (Max): 469W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0021120D,-33 12-C3M0021120D Base Product Number: C3M0021120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: ROHS3 Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325245-C3M0021120D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
Power Dissipation (Max): 469W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4818 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 82
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0021120D,-3312-C3M0021120D
Base Product Number: C3M0021120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Singapore
1200V 100A MOSFET Transistor
278-C3M0021120D
1200V 100A MOSFET Transistor 278-C3M0021120D
SICFET N-CH 1200V 100A TO247-3 Product overview: C3M0021120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0021120D can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 100A TO247-3 Product overview: C3M0021120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0021120D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0021120D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0021120D-ND
Single FETs, MOSFETs 1697-C3M0021120D-ND
N-Channel 1200V 100A (Tc) 469W (Tc) Through Hole TO-247-3

N-Channel 1200V 100A (Tc) 469W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed - 40AH1119 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed
40AH1119
Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed 40AH1119
MOSFET, N-CH, 1.2KV, 175DEG C, 469W ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 175DEG C, 469W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0021120D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0021120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0021120D
SICFET N-CH 1200V 100A TO247-3

SICFET N-CH 1200V 100A TO247-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Richardson RFPD Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0021120D C3M0021120D 1325245-C3M0021120D 278-C3M0021120D 1697-C3M0021120D-ND 40AH1119 C3M0021120D
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1200V 100A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 175Deg C, 469W Rohs Compliant Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts 1200 volts
IDSS 100000 milliamps
PD 469000 milliwatts 469 milliwatts
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