Wolfspeed FET, MOSFET Arrays CAB760M12HM3

Description
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 1015A (Tc) Chassis Mount Module
  • FET, MOSFET Arrays - 1697-CAB760M12HM3-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFET Modules - CAB760M12HM3 - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB760M12HM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 1015A (Tc) Chassis Mount Module
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 1697-CAB760M12HM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB760M12HM3-ND
FET, MOSFET Arrays 1697-CAB760M12HM3-ND
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 1015A (Tc) Chassis Mount Module

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 1015A (Tc) Chassis Mount Module

Buy Now Datasheet
Silicon Carbide MOSFET Modules - CAB760M12HM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB760M12HM3
Silicon Carbide MOSFET Modules CAB760M12HM3
1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features Low Inductance, Low Profile 62mm Footprint High Junction Temperature (175 C) Operation Implements Switching Optimized Third Generation SiC MOSFET Technology Light Weight AlSiC Baseplate High Reliability Silicon Nitride Insulator Applications Railway and Traction Solar EV Chargers Industrial Automation and Testing System Benefits Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC High Reliability Material Selection

1200 V, 760 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

Technical Features

  • Low Inductance, Low Profile 62mm Footprint
  • High Junction Temperature (175 C) Operation
  • Implements Switching Optimized Third Generation SiC MOSFET Technology
  • Light Weight AlSiC Baseplate
  • High Reliability Silicon Nitride Insulator

Applications

  • Railway and Traction
  • Solar
  • EV Chargers
  • Industrial Automation and Testing

System Benefits

  • Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • High Reliability Material Selection
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB760M12HM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB760M12HM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB760M12HM3
SIC 2N-CH 1200V 1015A MODULE

SIC 2N-CH 1200V 1015A MODULE

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1697-CAB760M12HM3-ND CAB760M12HM3 CAB760M12HM3
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Module 110 x 65 mm
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