Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single C3M0032120J1

Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324564-C3M0032120J1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 277W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 84 HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0032120J1TR, -3312-C3M0032120J1CT ,-3312-C3M0032120J1C T-ND,-3312-C3M003212 0J1TR-ND,1697-C3M003 2120J1DKR,-3312-C3M0 032120J1DKR-ND,-3312 -C3M0032120J1,-3312- C3M0032120J1DKRINACT IVE,1697-C3M0032120J 1CT-ND,1697-C3M00321 20J1DKR-ND,1697-C3M0 032120J1TR-ND,1697-C 3M0032120J1CT,1697-C 3M0032120J1,-3312-C3 M0032120J1DKR,-3312- C3M0032120J1TR Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 3 (168 Hours)
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Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324564-C3M0032120J1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 277W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 84 HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0032120J1TR, -3312-C3M0032120J1CT ,-3312-C3M0032120J1C T-ND,-3312-C3M003212 0J1TR-ND,1697-C3M003 2120J1DKR,-3312-C3M0 032120J1DKR-ND,-3312 -C3M0032120J1,-3312- C3M0032120J1DKRINACT IVE,1697-C3M0032120J 1CT-ND,1697-C3M00321 20J1DKR-ND,1697-C3M0 032120J1TR-ND,1697-C 3M0032120J1CT,1697-C 3M0032120J1,-3312-C3 M0032120J1DKR,-3312- C3M0032120J1TR Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 3 (168 Hours)
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324564-C3M0032120J1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324564-C3M0032120J1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324564-C3M0032120J1
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324564-C3M0032120J1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 277W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 84 HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0032120J1TR, -3312-C3M0032120J1CT ,-3312-C3M0032120J1C T-ND,-3312-C3M003212 0J1TR-ND,1697-C3M003 2120J1DKR,-3312-C3M0 032120J1DKR-ND,-3312 -C3M0032120J1,-3312- C3M0032120J1DKRINACT IVE,1697-C3M0032120J 1CT-ND,1697-C3M00321 20J1DKR-ND,1697-C3M0 032120J1TR-ND,1697-C 3M0032120J1CT,1697-C 3M0032120J1,-3312-C3 M0032120J1DKR,-3312- C3M0032120J1TR Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 3 (168 Hours)

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324564-C3M0032120J1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Power Dissipation (Max): 277W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 84
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0032120J1TR,-3312-C3M0032120J1CT,-3312-C3M0032120J1CT-ND,-3312-C3M0032120J1TR-ND,1697-C3M0032120J1DKR,-3312-C3M0032120J1DKR-ND,-3312-C3M0032120J1,-3312-C3M0032120J1DKRINACTIVE,1697-C3M0032120J1CT-ND,1697-C3M0032120J1DKR-ND,1697-C3M0032120J1TR-ND,1697-C3M0032120J1CT,1697-C3M0032120J1,-3312-C3M0032120J1DKR,-3312-C3M0032120J1TR
Base Product Number: C3M0032120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 3 (168 Hours)

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0032120J1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0032120J1-ND
Single FETs, MOSFETs 1697-C3M0032120J1-ND
N-Channel 1200V 68A (Tc) 277W (Tc) Surface Mount TO-263-7

N-Channel 1200V 68A (Tc) 277W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - C3M0032120J1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0032120J1
Single FETs, MOSFETs C3M0032120J1
1200V 32MOHM SIC MOSFET

1200V 32MOHM SIC MOSFET

Supplier's Site Datasheet
Singapore
1200V 32MOHM MOSFET Transistor
278-C3M0032120J1
1200V 32MOHM MOSFET Transistor 278-C3M0032120J1
1200V 32MOHM SIC MOSFET Product overview: C3M0032120J1 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 32MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 32MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120J1 can be used for catalog matching and distributor lookup.

1200V 32MOHM SIC MOSFET Product overview: C3M0032120J1 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 32MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 32MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120J1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0032120J1 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0032120J1
Silicon Carbide MOSFETs C3M0032120J1
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Solar inverters
  • EV motor drive
  • High voltage DC/DC converters
  • Switched mode power supplies
  • Load switch
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0032120J1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0032120J1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0032120J1
1200V 32MOHM SIC MOSFET

1200V 32MOHM SIC MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324564-C3M0032120J1 1697-C3M0032120J1-ND C3M0032120J1 278-C3M0032120J1 C3M0032120J1 C3M0032120J1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs 1200V 32MOHM MOSFET Transistor Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
PD 277000 milliwatts 277000 milliwatts 277 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Tube TO-263-7 TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packing Method Tube; Tube Tube Tube; Tube
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