Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single C3M0032120J1

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324564-C3M0032120J1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Power Dissipation (Max): 277W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 84
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0032120J1TR,-3312-C3M0032120J1CT,-3312-C3M0032120J1CT-ND,-3312-C3M0032120J1TR-ND,1697-C3M0032120J1DKR,-3312-C3M0032120J1DKR-ND,-3312-C3M0032120J1,-3312-C3M0032120J1DKRINACTIVE,1697-C3M0032120J1CT-ND,1697-C3M0032120J1DKR-ND,1697-C3M0032120J1TR-ND,1697-C3M0032120J1CT,1697-C3M0032120J1,-3312-C3M0032120J1DKR,-3312-C3M0032120J1TR
Base Product Number: C3M0032120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 3 (168 Hours)

N-Channel 1200V 68A (Tc) 277W (Tc) Surface Mount TO-263-7

1200V 32MOHM SIC MOSFET

1200V 32MOHM SIC MOSFET Product overview: C3M0032120J1 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 32MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 32MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120J1 can be used for catalog matching and distributor lookup.

Silicon Carbide Power MOSFET
C3M^TM MOSFET Technology Features

• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Q_rr)
• Halogen free, RoHS compliant

Benefits

• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

Applications

• Solar inverters
• EV motor drive
• High voltage DC/DC converters
• Switched mode power supplies
• Load switch