1200V 32MOHM SIC MOSFET
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324564-C3M0032120J1
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 41.4A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Power Dissipation (Max): 277W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3424 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 84
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0032120J1TR,
Base Product Number: C3M0032120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
Benefits
Applications
1200V 32MOHM SIC MOSFET Product overview: C3M0032120J1 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 32MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 32MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0032120J1 can be used for catalog matching and distributor lookup.
N-Channel 1200V 68A (Tc) 277W (Tc) Surface Mount TO-263-7
1200V 32MOHM SIC MOSFET
| ODG (Origin Data Global) | Win Source Electronics | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | C3M0032120J1 | 1324564-C3M0032120J1 | C3M0032120J1 | 278-C3M0032120J1 | 1697-C3M0032120J1-ND | C3M0032120J1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Silicon Carbide MOSFETs | 1200V 32MOHM MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 1200 volts | 1200 volts | ||||
| IDSS | 68000 milliamps | |||||
| PD | 277000 milliwatts | 277000 milliwatts | 277 milliwatts |