MOSFET N-CH 1200V 24A T-MAX Product overview: APT24M120B2 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT24M120B2 can be used for catalog matching and distributor lookup.
N-Channel 1200V 24A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss ""Miller"" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
MOSFET N-CH 1200V 24A T-MAX
| ERSAELECTRONICS PTE. LTD. | DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors |
| Product Number | 278-APT24M120B2 | APT24M120B2-ND | APT24M120B2 | APT24M120B2 |
| Product Name | 1200V 24A MOSFET Transistor | Single FETs, MOSFETs | Power MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 1200 volts | |||
| Transconductance | 0.0270 kS | |||
| PD | 1.04 milliwatts |