Wolfspeed Silicon Carbide MOSFETs C3M0160120J

Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0160120J includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy High voltage DC/DC converters Switch Mode Power Supplies UPS
  • Silicon Carbide MOSFETs - C3M0160120J - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0160120J-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - C3M0160120J - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0160120J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0160120J includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy High voltage DC/DC converters Switch Mode Power Supplies UPS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0160120J - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0160120J
Silicon Carbide MOSFETs C3M0160120J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0160120J includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy High voltage DC/DC converters Switch Mode Power Supplies UPS

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0160120J includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

  • 3rd Generation SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • UPS
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0160120J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0160120J-ND
Single FETs, MOSFETs 1697-C3M0160120J-ND
N-Channel 1200V 17A (Tc) 90W (Tc) Surface Mount TO-263-7

N-Channel 1200V 17A (Tc) 90W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - C3M0160120J - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0160120J
Single FETs, MOSFETs C3M0160120J
SICFET N-CH 1200V 17A TO263-7

SICFET N-CH 1200V 17A TO263-7

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0160120J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0160120J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0160120J
SICFET N-CH 1200V 17A TO263-7

SICFET N-CH 1200V 17A TO263-7

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0160120J 1697-C3M0160120J-ND C3M0160120J C3M0160120J
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
rDS(on) 0.1600 ohms
Package Type TO-263-7 TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Polarity N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
V(BR)DSS 1200 volts
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