Wolfspeed Silicon Carbide MOSFETs CPM3-1200-0032A

Description
Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses over temperature Avalanche ruggedness Benefits Improves system efficiency with lower switching loss Reduces system size; weight; and cooling requirements Increased power density Easy to parallel and compatible with standard gate drive design Applications Solid State Circuit Breakers Renewable Energy Inverters High voltage DC/DC converters Switch-Mode Power Supplies Uninterruptible Power Supplies (UPS) High Performance Welding Power Supplies Auxiliary power supplies for High Voltage Systems
Request a Quote Datasheet
Description
Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses over temperature Avalanche ruggedness Benefits Improves system efficiency with lower switching loss Reduces system size; weight; and cooling requirements Increased power density Easy to parallel and compatible with standard gate drive design Applications Solid State Circuit Breakers Renewable Energy Inverters High voltage DC/DC converters Switch-Mode Power Supplies Uninterruptible Power Supplies (UPS) High Performance Welding Power Supplies Auxiliary power supplies for High Voltage Systems
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - CPM3-1200-0032A - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
CPM3-1200-0032A
Silicon Carbide MOSFETs CPM3-1200-0032A
Features High blocking voltage with industry leading low RDS(on) over temperature stability Fast intrinsic diode with low reverse recovery charge (Qrr) High-speed switching with low output capacitance Low conduction losses over temperature Avalanche ruggedness Benefits Improves system efficiency with lower switching loss Reduces system size; weight; and cooling requirements Increased power density Easy to parallel and compatible with standard gate drive design Applications Solid State Circuit Breakers Renewable Energy Inverters High voltage DC/DC converters Switch-Mode Power Supplies Uninterruptible Power Supplies (UPS) High Performance Welding Power Supplies Auxiliary power supplies for High Voltage Systems

Features

  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Fast intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness

Benefits

  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design

Applications

  • Solid State Circuit Breakers
  • Renewable Energy Inverters
  • High voltage DC/DC converters
  • Switch-Mode Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • High Performance Welding Power Supplies
  • Auxiliary power supplies for High Voltage Systems
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPM3-1200-0032A
Product Name Silicon Carbide MOSFETs
rDS(on) 0.0320 ohms
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