MOSFET N-CH 1000V 11A TO247
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
N-Channel 1000V 11A (Tc) Through Hole TO-247 [B]
MOSFET N-CH 1000V 11A TO247
| ODG (Origin Data Global) | Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors |
| Product Number | APT1001RBVRG | APT1001RBVRG | APT1001RBVRG-ND | APT1001RBVRG |
| Product Name | Single FETs, MOSFETs | Power MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 1000 volts | |||
| IDSS | 11000 milliamps |
