Features
C3M SiC MOSFET technlogy
High blocking voltage with low RDS(on)
Easy to parallel and simple to drive
Resistant to Latch-up
High Gate Resistance for Drives
Benefits
Higher System Efficiency
Low Conduction Losses over Temperature
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
Automotive drive-train
Motor drives
Solid State Circuit Braker
Resonant topologies
Richardson RFPD
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Datasheet
Description
Features
C3M SiC MOSFET technlogy
High blocking voltage with low RDS(on)
Easy to parallel and simple to drive
Resistant to Latch-up
High Gate Resistance for Drives
Benefits
Higher System Efficiency
Low Conduction Losses over Temperature
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
Automotive drive-train
Motor drives
Solid State Circuit Braker
Resonant topologies
Features
C3M SiC MOSFET technlogy
High blocking voltage with low RDS(on)
Easy to parallel and simple to drive
Resistant to Latch-up
High Gate Resistance for Drives
Benefits
Higher System Efficiency
Low Conduction Losses over Temperature
Reduced Cooling Requirements
Increased System Switching Frequency
Applications
Automotive drive-train
Motor drives
Solid State Circuit Braker
Resonant topologies