C2M0025120D is a 1200-V, N-channel enhancement-mode silicon carbide MOSFET in a TO-247-3 package, designed for high-efficiency power conversion in applications such as solar inverters, motor drives, and DC/DC converters. The device features a drain-source on-state resistance of 25 mΩ at 25°C and 41 mΩ at 150°C, with a continuous drain current of 39 A at 100°C case temperature. It supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.24-0.33 °C/W. The MOSFET is avalanche-rated, latch-up resistant, halogen-free, and RoHS compliant. Switching performance includes a total gate charge of 194 nC, with turn-on and turn-off energies of 1.14 mJ and 0.8 mJ when using an external SiC diode. Mounting torque is specified at 1 Nm for M3 or 6-32 screws.
Features
N-chan SiC MOSFET 1200V 90A TO247
Manufacturer: Cree/Wolfspeed
Win Source Part Number: 770896-C2M0025120D
Series: Z-FET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Family Name: C2M0025120D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 20V
Manufacturer Package: TO-247-3
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 2.4V @ 10mA
Gate Charge (Qg) (Maximum) @ Vgs: 161nC @ 20V
Input Capacitance (Ciss) (Maximum) @ Vds: 2788pF @ 1000V
Vgs (Maximum): +25V, -10V
Power Dissipation (Maximum): 463W (Tc)
Rds On (Maximum) @ Id, Vgs: 34 mOhm @ 50A, 20V
Alternative Parts (Cross-Reference): SCT3040KLC11; SCT3022KLGC11; SCT3022KLC11; SCT3040KLHRC11;
Introduction Date: September 02, 2015
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
SICFET N-CH 1200V 90A TO247-3 Product overview: C2M0025120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M0025120D can be used for catalog matching and distributor lookup.
N-Channel 1200V 90A (Tc) 463W (Tc) Through Hole TO-247-3
MOSFET, N-CH, 1.2KV, 90A, TO-247-3; MOSFET Module Configuration:Single
MOSFET SIC MOSFET 1200V RDS ON 25 mOhm
SICFET N-CH 1200V 90A TO247-3
SICFET N-CH 1200V 90A TO247-3
| Wolfspeed | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C2M0025120D | 9158818 | 9158818P | 770896-C2M0025120D | 278-C2M0025120D | C2M0025120D-ND | 54X4873 | C2M0025120D | C2M0025120D | C2M0025120D |
| Product Name | 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0025120D | 1200V 90A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 90A, To-247-3; Mosfet Module Configuration Wolfspeed | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET | Silicon Carbide | SiCFET (Silicon Carbide) | |||||||
| Package Type | TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-247; SOT3 | Tube | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Number of units in IC | 1 |
