Wolfspeed 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET C2M0025120D

Description
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Avalanche ruggedness
  • 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET - C2M0025120D - Wolfspeed
    Wolfspeed
  • Single FETs, MOSFETs - C2M0025120D-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0025120D - 770896-C2M0025120D - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - C2M0025120D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Silicon Carbide MOSFETs - C2M0025120D - Richardson RFPD
    Richardson RFPD
  • MOSFETs - 9158818 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 9158818P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1456863 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0025120D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1.2Kv, 90A, To-247-3; Mosfet Module Configuration Wolfspeed - 54X4873 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Avalanche ruggedness
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET - C2M0025120D - Wolfspeed
Wolfspeed
Durham, NC, United States
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET
C2M0025120D
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET C2M0025120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Avalanche ruggedness

Features

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Avalanche ruggedness
Supplier's Site Datasheet
Single FETs, MOSFETs - C2M0025120D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C2M0025120D-ND
Single FETs, MOSFETs C2M0025120D-ND
N-Channel 1200V 90A (Tc) 463W (Tc) Through Hole TO-247-3

N-Channel 1200V 90A (Tc) 463W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0025120D - 770896-C2M0025120D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0025120D
770896-C2M0025120D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0025120D 770896-C2M0025120D
Manufacturer: Cree/Wolfspeed Win Source Part Number: 770896-C2M0025120D Series: Z-FET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: SiCFET (Silicon Carbide) Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Family Name: C2M0025120D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 20V Manufacturer Package: TO-247-3 Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Maximum) @ Vgs: 161nC @ 20V Input Capacitance (Ciss) (Maximum) @ Vds: 2788pF @ 1000V Vgs (Maximum): +25V, -10V Power Dissipation (Maximum): 463W (Tc) Rds On (Maximum) @ Id, Vgs: 34 mOhm @ 50A, 20V Alternative Parts (Cross-Reference): SCT3040KLC11; SCT3022KLGC11; SCT3022KLC11; SCT3040KLHRC11; Introduction Date: September 02, 2015 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 770896-C2M0025120D
Series: Z-FET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Family Name: C2M0025120D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 20V
Manufacturer Package: TO-247-3
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 2.4V @ 10mA
Gate Charge (Qg) (Maximum) @ Vgs: 161nC @ 20V
Input Capacitance (Ciss) (Maximum) @ Vds: 2788pF @ 1000V
Vgs (Maximum): +25V, -10V
Power Dissipation (Maximum): 463W (Tc)
Rds On (Maximum) @ Id, Vgs: 34 mOhm @ 50A, 20V
Alternative Parts (Cross-Reference): SCT3040KLC11; SCT3022KLGC11; SCT3022KLC11; SCT3040KLHRC11;
Introduction Date: September 02, 2015
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - C2M0025120D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C2M0025120D
Single FETs, MOSFETs C2M0025120D
SICFET N-CH 1200V 90A TO247-3

SICFET N-CH 1200V 90A TO247-3

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C2M0025120D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C2M0025120D
Silicon Carbide MOSFETs C2M0025120D
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Features High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Avalanche ruggedness

2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET

Features

  • High Speed Switching with Low Capacitances
  • High Blocking Voltage with Low RDS(on)
  • Easy to Parallel and Simple to Drive
  • Resistant to Latch-Up
  • Avalanche ruggedness
Supplier's Site Datasheet
MOSFETs - 9158818 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158818
MOSFETs 9158818
N-chan SiC MOSFET 1200V 90A TO247

N-chan SiC MOSFET 1200V 90A TO247

Supplier's Site
MOSFETs - 9158818P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158818P
MOSFETs 9158818P
N-chan SiC MOSFET 1200V 90A TO247

N-chan SiC MOSFET 1200V 90A TO247

Supplier's Site
MOSFETs - 1456863 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1456863
MOSFETs 1456863
N-chan SiC MOSFET 1200V 90A TO247

N-chan SiC MOSFET 1200V 90A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C2M0025120D
MOSFET C2M0025120D
MOSFET SIC MOSFET 1200V RDS ON 25 mOhm

MOSFET SIC MOSFET 1200V RDS ON 25 mOhm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0025120D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C2M0025120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C2M0025120D
SICFET N-CH 1200V 90A TO247-3

SICFET N-CH 1200V 90A TO247-3

Supplier's Site
Mosfet, N-Ch, 1.2Kv, 90A, To-247-3; Mosfet Module Configuration Wolfspeed - 54X4873 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 90A, To-247-3; Mosfet Module Configuration Wolfspeed
54X4873
Mosfet, N-Ch, 1.2Kv, 90A, To-247-3; Mosfet Module Configuration Wolfspeed 54X4873
MOSFET, N-CH, 1.2KV, 90A, TO-247-3; MOSFET Module Configuration:Single ; Continuous Drain Current Id:90A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 90A, TO-247-3; MOSFET Module Configuration:Single; Continuous Drain Current Id:90A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Wolfspeed DigiKey Win Source Electronics ODG (Origin Data Global) Richardson RFPD RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number C2M0025120D C2M0025120D-ND 770896-C2M0025120D C2M0025120D C2M0025120D 9158818 9158818P C2M0025120D C2M0025120D 54X4873
Product Name 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - C2M0025120D Single FETs, MOSFETs Silicon Carbide MOSFETs MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 90A, To-247-3; Mosfet Module Configuration Wolfspeed
Transistor Technology / Material 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247-3 TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; TO-247-3 TO-3; TO-247
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 463000 milliwatts 463000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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