Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single C3M0060065J

Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324553-C3M0060065J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Vgs(th) (Max) @ Id: 3.6V @ 5mA Power Dissipation (Max): 136W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 79 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0060065J,-33 12-C3M0060065J Base Product Number: C3M0060065 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324553-C3M0060065J - Win Source Electronics
    Win Source Electronics
  • Silicon Carbide MOSFETs - C3M0060065J - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - C3M0060065J - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1697-C3M0060065J-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0060065J - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324553-C3M0060065J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Vgs(th) (Max) @ Id: 3.6V @ 5mA Power Dissipation (Max): 136W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 79 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0060065J,-33 12-C3M0060065J Base Product Number: C3M0060065 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324553-C3M0060065J - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324553-C3M0060065J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324553-C3M0060065J
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324553-C3M0060065J Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V Vgs(th) (Max) @ Id: 3.6V @ 5mA Power Dissipation (Max): 136W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 79 MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0060065J,-33 12-C3M0060065J Base Product Number: C3M0060065 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324553-C3M0060065J
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Power Dissipation (Max): 136W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0060065J,-3312-C3M0060065J
Base Product Number: C3M0060065
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0060065J - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0060065J
Silicon Carbide MOSFETs C3M0060065J
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications EV charging Server power supplies Solar PV inverters UPS DC/DC converters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd Generation SiC MOSFET technology
  • Low inductance package with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Easy to parallel and simple to drive
  • Enable new hard switching PFC topologies (Totem-Pole)

Applications

  • EV charging
  • Server power supplies
  • Solar PV inverters
  • UPS
  • DC/DC converters
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0060065J - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0060065J
Single FETs, MOSFETs C3M0060065J
SICFET N-CH 650V 36A TO263-7

SICFET N-CH 650V 36A TO263-7

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0060065J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-ND
Single FETs, MOSFETs 1697-C3M0060065J-ND
N-Channel 650V 36A (Tc) 136W (Tc) Surface Mount TO-263-7

N-Channel 650V 36A (Tc) 136W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650V 36A MOSFET Transistor
278-C3M0060065J
650V 36A MOSFET Transistor 278-C3M0060065J
SICFET N-CH 650V 36A TO263-7 Product overview: C3M0060065J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0060065J can be used for catalog matching and distributor lookup.

SICFET N-CH 650V 36A TO263-7 Product overview: C3M0060065J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0060065J can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0060065J - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0060065J
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0060065J
SICFET N-CH 650V 36A TO263-7

SICFET N-CH 650V 36A TO263-7

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324553-C3M0060065J C3M0060065J C3M0060065J 1697-C3M0060065J-ND 278-C3M0060065J C3M0060065J
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs 650V 36A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7 TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
rDS(on) 0.0600 ohms
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 650 volts
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