Richardson RFPD Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Page: 1 2 3
Product Name Notes
1200 V, 175 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero...
1200 V, 350 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero...
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero...
150V, 200A, Insulated type 6-element pack, NTC Thermistor inside
3300V Silicon Carbide (SiC) MOSFET MOSFET-SiC-3300V is part of our newest family of SiC MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize...
700V, 60 mOhm typical at VGS = 20V, 68 mOhm typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, Power Surface Mount Top-Side Cooled (PSMT) 16-lead with a source...
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs Gen 3+ Features Automotive Qualified High blocking voltage with industry leading low RDS(on) over temperature stability Resistant to Latch-up High gate...
Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized , Half-Bridge Module Technical Features High Power Density Footprint High Junction Temperature (175 C) Operation Low Inductance (6.7 nH) Design Implements...
Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss , High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 150C Fast and reliable...
Features SiC Power MOSFET High Speed Switching Ultra low loss Low RDS(on) Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 750V SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High blocking...
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Optimized package with separate driver source pin High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic...
Silicon Carbide Power MOSFET N-Channel Enhancement Mode High blocking voltage with low on-resistance High speed switching with low capacitances 12V...15V / 0V VGS compatible with most flyback controllers Ultra-low drain-gate...
Silicon Carbide, Six-Pack Module Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6...
Technical Features Fully SiC MOSFET-based for Ultra-Low Loss Comparative Tracking Index (CTI) greater than 600 V for Material Group I Extremely Low Power Loop Inductance (6.6 nH) High Performance Si3N4...
Technical Features Industry Standard 62 mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe...
Applications Welding converters Switched mode power supplies Uninterruptible Power Supply (UPS) EV motor and traction drive Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky diode Zero reverse...
Controllable Bridge Rectifier
Features 1200V SiC Planar MOSFET Single phase inverter topology One screw mounting module Fully compatible with other SEMITOP® Press-Fit types Improved thermal performance by aluminum oxide substrate Ultra Low...
Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant...
Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching...
Features High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET (Cree) and 1200V SiC diode (Cree) Target Applications Solar inverter
Features High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET and 1200V SiC diode Integrated bypass diode Target Applications Solar Inverter UPS
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = +175C Fast and reliable...
Features Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable...
Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct mounting to heatsink...
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET: High speed switching, Low RDS(on), Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Kelvin source for easy drive Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF...
Features SiC Power MOSFET: Low RDS(on), High speed switching, Ultra low loss Very Low stray inductance AIN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation High-power...
Features SiC Power MOSFET: Low RDS(on), High speed switching Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal performance Internal thermistor for...
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Kelvin source for easy drive Ultra-low weight and profile Si3N4 substrate with thick copper for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High speed switching Very low stray inductance Ultra-low weight and profile Kelvin source for easy drive Si3N4 substrate with thick copper for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive High level of integration M6 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance High level of integration M5 power connectors Aluminum Nitride (AlN) substrate for improved...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Si3N4 substrate for improved thermal performance...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits High-efficiency...
Features SiC Power MOSFET: Low RDS(on), High temperature performance Low stray inductance Kelvin source for easy drive M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET: Low RDS(on), High temperature performance M2.5 signals connectors Very Low stray inductance M4 and M5 power connectors Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin emitter for...
Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance...
Features SiC Power MOSFET: Low RDS(on), High-speed switching, Ultra low loss Very Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for...
Features SiC Power MOSFET High speed switching Low RDS(on) Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET High Speed Switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient...
Features SiC Power MOSFET High-speed switching Low RDS(on) Ultra low loss Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Ultra-low...
Features SiC Power MOSFET Low RDS(on) High speed switching SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Kelvin source...
Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low...
Features SiC Power MOSFET Low RDS(on) High-speed switching Ultra low loss SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Benefits...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Kelvin...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Low...
Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF Very...
Features SiC Schottky Diode IGBT4 Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended storage...
Features SiC Schottky Diode SiC MOSFET Low stray inductance Lead frames for power connections SI3N4 substrate for improved thermal performance AlSiC base plate for extended reliability and reduced weight Extended...
Features Very low stray inductance Internal thermistor for temperature monitoring M4 and M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance SiC Power MOSFET Low RDS(on)...
Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature...
MOSFET Module Features Compact Design One screw mounting Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB) Trench Technology Short internal connections and low inductance case Typical...
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristics|•Sho rt internal connections avoid oscillations|•Isolat ed copper baseplates|•All electrical connections on top for easy busbaring|•Large clearance (10mm) and creepage distances (13mm)|•UL recognized, file...
Power MOSFET Module|•N Channel, enhancement mode|•Avalanche characteristic|•Shor t connections and built-in gate resistors to suppress internal oscillations even in critical applications|•Isolat ed copper baseplate|•All electrical connections on top for easy...
Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield...
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast...
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
SiC MOSFET G4 AUTO 1200V/14mO MLT
SiC, MOSFET, 15 mOhm,750V, TSC (U2) , Automotive, Gen4
SiC, MOSFET, 160 mOhm,1200V, TSC (U2) , Automotive
SiC, MOSFET, 25 mOhm, 1200V, TO-247-4, Automotive, Gen4
SiC, MOSFET, 25 mOhm,1200V, TO-263-7 XL T&R , Automotive, Gen4
SiC, MOSFET, 25 mOhm,1200V, TSC (U2) , Automotive, Gen4
SiC, MOSFET, 25 mOhm,750V, TSC (U2) , Automotive, Gen4
SiC, MOSFET, 36 mOhm, 1200V, TO-247-4, Automotive, Gen4
SiC, MOSFET, 45 mOhm,750V, TSC (U2) , Automotive, Gen4
SiC, MOSFET, 60 mOhm,750V, TSC (U2) , Automotive, Gen4
SiC, MOSFET,36 mOhm,1200V, TO-263-7 XL T&R , Automotive, Gen4
SiC, MOSFET,36 mOhm,1200V, TSC (U2) , Automotive, Gen4
Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. Features...
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features 3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with...
Silicon Carbide Power MOSFET E-Series Automotive Features 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse...
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode 3rd generation SiC MOSFET technology Optimized package with separate driver source pin 4.7mm of creepage distance between drain and source High...
The MSCSM120DUM027AG device is a 1200V/733A dual common source silicon carbide (SiC) MOSFET powermodule. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low stray...
The MSCSM120DUM042AG device is a 1200V/495A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM08T3AG device is a 1200V/337A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM11T3AG device is a 1200V/254A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120DUM16T3AG device is a 1200V/173A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM120TLM08CAG device is a three level inverter 1200V/333A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM120TLM11CAG device is a three level inverter 1200V/251A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM120TLM16C3AG device is a 1200V/173A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM120TLM31C3AG device is a 1200V/89A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM170AM058CD3AG device is a 1700 V/353 A phase leg silicon carbide (SiC) power module. Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse...
The MSCSM170DUM058AG device is a 1700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM11T3AG device is a 1700V/240A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM15T3AG device is a 1700V/181A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170DUM23T3AG device is a 1700V/124A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM170TLM15CAG device is a three level inverter 1700V/179A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM170TLM45C3AG device is a three level inverter 1700V/64A silicon carbide (SiC) MOSFET power module Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70DUM017AG device is a 700V/1021A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM025AG device is a 700V/689A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM07T3AG device is a 700V/353A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70DUM10T3AG device is a 700V/241A dual common source silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance Kelvin source for easy drive Low...
The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM07CAG device is a 700V/349A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery,...
The MSCSM70TLM10C3AG device is a 700V/241A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70TLM19C3AG device is a 700V/124A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The MSCSM70TLM44C3AG device is a 700V/58A three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode (CR1 and CR2):...
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.

<< Prev Next >>