Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
SICFET N-CH 900V 35A D2PAK-7
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
MOSFET G3 SiC MOSFET 900V, 65mOhm
MOSFET, N-CH, 900V, 35A, TO-263-7; MOSFET Module Configuration:Single
SICFET N-CH 900V 35A D2PAK-7
| Richardson RFPD | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C3M0065090J-TR | C3M0065090J-TR | 1697-C3M0065090J-TR-ND | C3M0065090J-TR | 49Y7401 | C3M0065090J-TR |
| Product Name | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.0650 ohms | |||||
| Package Type | TO-263-7 | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-3; TO-263 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 900 volts |