Wolfspeed Single FETs, MOSFETs C3M0065090J-TR

Description
SICFET N-CH 900V 35A D2PAK-7
  • Single FETs, MOSFETs - C3M0065090J-TR - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Silicon Carbide MOSFETs - C3M0065090J-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0065090J-TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0065090J-DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0065090J-CT-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed - 49Y7401 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0065090J-TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
SICFET N-CH 900V 35A D2PAK-7
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - C3M0065090J-TR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0065090J-TR
Single FETs, MOSFETs C3M0065090J-TR
SICFET N-CH 900V 35A D2PAK-7

SICFET N-CH 900V 35A D2PAK-7

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0065090J-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0065090J-TR
Silicon Carbide MOSFETs C3M0065090J-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • New low impedance package with driver source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0065090J-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0065090J-TR-ND
Single FETs, MOSFETs 1697-C3M0065090J-TR-ND
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7

N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0065090J-DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0065090J-DKR-ND
Single FETs, MOSFETs 1697-C3M0065090J-DKR-ND
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7

N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0065090J-CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0065090J-CT-ND
Single FETs, MOSFETs 1697-C3M0065090J-CT-ND
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7

N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0065090J-TR
MOSFET C3M0065090J-TR
MOSFET G3 SiC MOSFET 900V, 65mOhm

MOSFET G3 SiC MOSFET 900V, 65mOhm

Buy Now Datasheet
Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed - 49Y7401 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed
49Y7401
Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed 49Y7401
MOSFET, N-CH, 900V, 35A, TO-263-7; MOSFET Module Configuration:Single ; Continuous Drain Current Id:35A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 900V, 35A, TO-263-7; MOSFET Module Configuration:Single; Continuous Drain Current Id:35A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0065090J-TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0065090J-TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0065090J-TR
SICFET N-CH 900V 35A D2PAK-7

SICFET N-CH 900V 35A D2PAK-7

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Richardson RFPD DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0065090J-TR C3M0065090J-TR 1697-C3M0065090J-TR-ND C3M0065090J-TR 49Y7401 C3M0065090J-TR
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 900 volts
IDSS 35000 milliamps 35000 milliamps
PD 113000 milliwatts
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