SICFET N-CH 900V 35A D2PAK-7
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
MOSFET G3 SiC MOSFET 900V, 65mOhm
SICFET N-CH 900V 35A D2PAK-7
MOSFET, N-CH, 900V, 35A, TO-263-7; MOSFET Module Configuration:Single
| ODG (Origin Data Global) | DigiKey | Richardson RFPD | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0065090J-TR | 1697-C3M0065090J-TR-ND | C3M0065090J-TR | C3M0065090J-TR | C3M0065090J-TR | 49Y7401 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Silicon Carbide MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 900V, 35A, To-263-7; Mosfet Module Configuration Wolfspeed |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 900 volts | |||||
| IDSS | 35000 milliamps | 35000 milliamps | ||||
| PD | 113000 milliwatts |
