Mosfet Array 2 N-Channel (Half Bridge) 1700V (1.7kV) 325A (Tc) 1760W Chassis Mount Module
MOSFET 2N-CH 1700V 325A MODULE Product overview: CAS300M17BM2 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 325A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 325A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CAS300M17BM2 can be used for catalog matching and distributor lookup.
Dual N-chan SiC MOSFET Module 1700V 225A
Dual N-chan SiC MOSFET Module 1700V 225A
MOSFET 2N-CH 1700V 325A MODULE
MOSFET 2N-CH 1700V 325A MODULE
MOSFET MODULE, DUAL N-CH, 1.7KV, 325A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:325A; Drain Source Voltage Vds:1.7kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1697-CAS300M17BM2-ND | 289-CAS300M17BM2 | 9163876 | CAS300M17BM2 | CAS300M17BM2 | 94X0461 |
| Product Name | FET, MOSFET Arrays | 1700V 325A MOSFET Transistor | MOSFETs | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Module, Dual N-Ch, 1.7Kv, 325A; Mosfet Module Configuration Wolfspeed |
| Package Type | Module | Box | Half bridge | Module | TO-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| V(BR)DSS | 1700 volts | 1700 volts | ||||
| PD | 1.87E6 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
