Wolfspeed FET, MOSFET Arrays CAS300M17BM2

Description
Mosfet Array 2 N-Channel (Half Bridge) 1700V (1.7kV) 325A (Tc) 1760W Chassis Mount Module
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 1700V (1.7kV) 325A (Tc) 1760W Chassis Mount Module
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 1697-CAS300M17BM2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAS300M17BM2-ND
FET, MOSFET Arrays 1697-CAS300M17BM2-ND
Mosfet Array 2 N-Channel (Half Bridge) 1700V (1.7kV) 325A (Tc) 1760W Chassis Mount Module

Mosfet Array 2 N-Channel (Half Bridge) 1700V (1.7kV) 325A (Tc) 1760W Chassis Mount Module

Buy Now Datasheet
FET, MOSFET Arrays - CAS300M17BM2 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
CAS300M17BM2
FET, MOSFET Arrays CAS300M17BM2
MOSFET 2N-CH 1700V 325A MODULE

MOSFET 2N-CH 1700V 325A MODULE

Supplier's Site Datasheet
MOSFETs - 9163876 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9163876
MOSFETs 9163876
Dual N-chan SiC MOSFET Module 1700V 225A

Dual N-chan SiC MOSFET Module 1700V 225A

Supplier's Site
MOSFETs - 1629722 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1629722
MOSFETs 1629722
Dual N-chan SiC MOSFET Module 1700V 225A

Dual N-chan SiC MOSFET Module 1700V 225A

Supplier's Site
Silicon Carbide MOSFET Modules - CAS300M17BM2 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAS300M17BM2
Silicon Carbide MOSFET Modules CAS300M17BM2
1.7kV, 8.0 mOhm; All-Silicon Carbide Half-Bridge Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Wolfspeed continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by C2M large-area SiC chip technology, the CAS300M17BM2 new half-bridge module exhibits an impressive 8-mOhm on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400 A or more.

1.7kV, 8.0 mOhm; All-Silicon Carbide Half-Bridge Module

Features

  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Ease of Paralleling
  • Copper Baseplate and Aluminum Nitride Insulator

Benefits

  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Mitigates Over-voltage Protection
  • Reduced Thermal Requirements
  • Reduced System Cost

Wolfspeed continues to extend its leadership in silicon-carbide (SiC) power-device technology with the release of the industry’s first all-SiC, 1.7-kV power module in an industry-standard 62-mm housing. Powered by C2M large-area SiC chip technology, the CAS300M17BM2 new half-bridge module exhibits an impressive 8-mOhm on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400 A or more.

Supplier's Site Datasheet
Singapore
1700V 325A MOSFET Transistor
289-CAS300M17BM2
1700V 325A MOSFET Transistor 289-CAS300M17BM2
MOSFET 2N-CH 1700V 325A MODULE Product overview: CAS300M17BM2 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 325A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 325A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CAS300M17BM2 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 1700V 325A MODULE Product overview: CAS300M17BM2 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 325A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 325A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CAS300M17BM2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Module, Dual N-Ch, 1.7Kv, 325A; Mosfet Module Configuration Wolfspeed - 94X0461 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, Dual N-Ch, 1.7Kv, 325A; Mosfet Module Configuration Wolfspeed
94X0461
Mosfet Module, Dual N-Ch, 1.7Kv, 325A; Mosfet Module Configuration Wolfspeed 94X0461
MOSFET MODULE, DUAL N-CH, 1.7KV, 325A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:325A; Drain Source Voltage Vds:1.7kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET MODULE, DUAL N-CH, 1.7KV, 325A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:325A; Drain Source Voltage Vds:1.7kV; No. of Pins:-; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAS300M17BM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAS300M17BM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAS300M17BM2
MOSFET 2N-CH 1700V 325A MODULE

MOSFET 2N-CH 1700V 325A MODULE

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) RS Components, Ltd. Richardson RFPD ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1697-CAS300M17BM2-ND CAS300M17BM2 9163876 CAS300M17BM2 289-CAS300M17BM2 94X0461 CAS300M17BM2
Product Name FET, MOSFET Arrays FET, MOSFET Arrays MOSFETs Silicon Carbide MOSFET Modules 1700V 325A MOSFET Transistor Mosfet Module, Dual N-Ch, 1.7Kv, 325A; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Module Module Half bridge 62x106 Box TO-3
Polarity N-Channel; 2 N-Channel (Half Bridge) N-Channel
Transistor Technology / Material Silicon Carbide (SiC)
V(BR)DSS 1700 volts 1700 volts
IDSS 325000 milliamps 325000 milliamps
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