Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
N-Channel 600V 25A (Tc) Through Hole TO-247 [B]
MOSFET N-CH 600V 25A TO247
Manufacturer: Microchip Technology
Win Source Part Number: 861612-APT6025BVRG
Series: POWER MOS V®
Features: N-Channel 600 V 25A (Tc) Through Hole TO-247 [B]
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Family Name: APT6025
Categories: Discrete Semiconductor Products
Case / Package: TO-247 [B]
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 28 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 25A TO247
| Richardson RFPD | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | APT6025BVRG | APT6025BVRG-ND | APT6025BVRG | 861612-APT6025BVRG | APT6025BVRG |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6025BVRG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.2500 ohms | ||||
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247 [B] | TO-247; TO-247-3 |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
