Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
Manufacturer: Microchip Technology
Win Source Part Number: 1324081-APT10078BLLG
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 1
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Supplier Device Package: TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 84
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT10078
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS Compliant
N-Channel 1000V 14A (Tc) 403W (Tc) Through Hole TO-247 [B]
MOSFET N-CH 1000V 14A TO247
| Richardson RFPD | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | APT10078BLLG | 1324081-APT10078BLLG | APT10078BLLG-ND | APT10078BLLG |
| Product Name | Power MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.7800 ohms | |||
| Package Type | TO-247; TO-247 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 |
| Polarity | N-Channel | N-Channel |
