Wolfspeed Single FETs, MOSFETs C3M0015065K

Description
N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-4L
Request a Quote Datasheet
Description
N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-4L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-C3M0015065K-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0015065K-ND
Single FETs, MOSFETs 1697-C3M0015065K-ND
N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-4L

N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277485-C3M0015065K - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277485-C3M0015065K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277485-C3M0015065K
Win Source Part Number: 1277485-C3M0015065K Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: C3M™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Power Dissipation (Max): 416W (Tc) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 75 pct. MSL Level: Not Applicable HTSUS: 8541.29.0095 Mfr: Wolfspeed, Inc. Other Names: -3312-C3M0015065K,16 97-C3M0015065K Base Product Number: C3M0015065 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1277485-C3M0015065K
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: C3M™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Power Dissipation (Max): 416W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Other Names: -3312-C3M0015065K,1697-C3M0015065K
Base Product Number: C3M0015065
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0015065K - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0015065K
Silicon Carbide MOSFETs C3M0015065K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications EV charging Solar inverters UPS SMPS DC/DC converters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • EV charging
  • Solar inverters
  • UPS
  • SMPS
  • DC/DC converters
Supplier's Site Datasheet
Singapore
650V 120A MOSFET Transistor
278-C3M0015065K
650V 120A MOSFET Transistor 278-C3M0015065K
SICFET N-CH 650V 120A TO247-4L Product overview: C3M0015065K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0015065K can be used for catalog matching and distributor lookup.

SICFET N-CH 650V 120A TO247-4L Product overview: C3M0015065K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0015065K can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0015065K - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0015065K
Single FETs, MOSFETs C3M0015065K
SICFET N-CH 650V 120A TO247-4L

SICFET N-CH 650V 120A TO247-4L

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0015065K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0015065K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0015065K
SICFET N-CH 650V 120A TO247-4L

SICFET N-CH 650V 120A TO247-4L

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Richardson RFPD ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1697-C3M0015065K-ND 1277485-C3M0015065K C3M0015065K 278-C3M0015065K C3M0015065K C3M0015065K
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Silicon Carbide MOSFETs 650V 120A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-4 TO-247; SOT3 TO-247; TO-247-4 Tube TO-247; TO-247-4 TO-247; TO-247-4
rDS(on) 0.0150 ohms
MOSFET Operating Mode Enhancement
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