N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-4L
Win Source Part Number: 1277485-C3M0015065K
Category: Discrete Semiconductor Products>Transistors
Series: C3M™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 15.5mA
Power Dissipation (Max): 416W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Other Names: -3312-C3M0015065K,16
Base Product Number: C3M0015065
Drive Voltage (Max Rds On, Min Rds On): 15V
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
Benefits
Applications
SICFET N-CH 650V 120A TO247-4L Product overview: C3M0015065K from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0015065K can be used for catalog matching and distributor lookup.
SICFET N-CH 650V 120A TO247-4L
SICFET N-CH 650V 120A TO247-4L
| DigiKey | Win Source Electronics | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1697-C3M0015065K-ND | 1277485-C3M0015065K | C3M0015065K | 278-C3M0015065K | C3M0015065K | C3M0015065K |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Silicon Carbide MOSFETs | 650V 120A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Package Type | TO-247; TO-247-4 | TO-247; SOT3 | TO-247; TO-247-4 | Tube | TO-247; TO-247-4 | TO-247; TO-247-4 |
| rDS(on) | 0.0150 ohms | |||||
| MOSFET Operating Mode | Enhancement |