Wolfspeed Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode C2M0045170D

Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - C2M0045170D - Wolfspeed
    Wolfspeed
  • MOSFETs - 1923486 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1923366 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325241-C2M0045170D - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - C2M0045170D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - C2M0045170D-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - C2M0045170D - Richardson RFPD
    Richardson RFPD
  • Mosfet, N-Ch, 1.7Kv, 72A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6011 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0045170D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 108732441 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - C2M0045170D - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
C2M0045170D
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode C2M0045170D
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Features

  • 1700V of blocking voltage with low RDS(on)
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
MOSFETs - 1923486 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923486
MOSFETs 1923486
SiC Power MOSFET 1700V, 72A

SiC Power MOSFET 1700V, 72A

Supplier's Site
MOSFETs - 1923366 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923366
MOSFETs 1923366
SiC Power MOSFET 1700V, 72A

SiC Power MOSFET 1700V, 72A

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
1700V 72A MOSFET Transistor
278-C2M0045170D
1700V 72A MOSFET Transistor 278-C2M0045170D
SICFET N-CH 1700V 72A TO247-3 Product overview: C2M0045170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 72A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 72A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M0045170D can be used for catalog matching and distributor lookup.

SICFET N-CH 1700V 72A TO247-3 Product overview: C2M0045170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 72A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 72A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M0045170D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325241-C2M0045170D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325241-C2M0045170D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325241-C2M0045170D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325241-C2M0045170D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 18mA Power Dissipation (Max): 520W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V Vgs (Max): +25V, -10V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: Not Applicable HTSUS: 8541.29.0095 Other Part Number: -3312-C2M0045170D Base Product Number: C2M0045170 Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325241-C2M0045170D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 18mA
Power Dissipation (Max): 520W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Other Part Number: -3312-C2M0045170D
Base Product Number: C2M0045170
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Single FETs, MOSFETs - C2M0045170D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C2M0045170D
Single FETs, MOSFETs C2M0045170D
SICFET N-CH 1700V 72A TO247-3

SICFET N-CH 1700V 72A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - C2M0045170D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C2M0045170D-ND
Single FETs, MOSFETs C2M0045170D-ND
N-Channel 1700V 72A (Tc) 520W (Tc) Through Hole TO-247-3

N-Channel 1700V 72A (Tc) 520W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Silicon Carbide MOSFETs - C2M0045170D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C2M0045170D
Silicon Carbide MOSFETs C2M0045170D
Features High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Resistant to Latch-up Halogen Free, RoHS Compliant Benefits Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters Motor Drives Pulsed Power Applications

Features

  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Resistant to Latch-up
  • Halogen Free, RoHS Compliant

Benefits

  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC Converters
  • Motor Drives
  • Pulsed Power Applications
Supplier's Site Datasheet
Mosfet, N-Ch, 1.7Kv, 72A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6011 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.7Kv, 72A, To-247; Mosfet Module Configuration Wolfspeed
98Y6011
Mosfet, N-Ch, 1.7Kv, 72A, To-247; Mosfet Module Configuration Wolfspeed 98Y6011
MOSFET, N-CH, 1.7KV, 72A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:72A; Drain Source Voltage Vds:1.7kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

MOSFET, N-CH, 1.7KV, 72A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:72A; Drain Source Voltage Vds:1.7kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0045170D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C2M0045170D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C2M0045170D
SICFET N-CH 1700V 72A TO247-3

SICFET N-CH 1700V 72A TO247-3

Supplier's Site
Transistor - 108732441 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
108732441
Transistor 108732441
MOSFET, N-CH, 1.7KV, 72A, TO-247, MOSFET CONFIGURATION:SINGLE , TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:72A, DRAIN SOURCE VOLTAGE VDS:1.7KV, ON RESISTANCE RDS(ON):0.045OHM, NO. OF PINS:3PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 1.7KV, 72A, TO-247, MOSFET CONFIGURATION:SINGLE, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:72A, DRAIN SOURCE VOLTAGE VDS:1.7KV, ON RESISTANCE RDS(ON):0.045OHM, NO. OF PINS:3PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C2M0045170D
MOSFET C2M0045170D
MOSFET SiC Power MOSFET 1700V, 72A

MOSFET SiC Power MOSFET 1700V, 72A

Buy Now Datasheet

Technical Specifications

  Wolfspeed RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey Richardson RFPD Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number C2M0045170D 1923486 278-C2M0045170D 1325241-C2M0045170D C2M0045170D C2M0045170D-ND C2M0045170D 98Y6011 C2M0045170D 108732441 C2M0045170D
Product Name Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode MOSFETs 1700V 72A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Silicon Carbide MOSFETs Mosfet, N-Ch, 1.7Kv, 72A, To-247; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Transistor Technology / Material Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-3 TO-247; To-247 Tube TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
Number of units in IC 1
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