Wolfspeed Silicon Carbide MOSFET Modules CAB006M12GM3

Description
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
  • Silicon Carbide MOSFET Modules - CAB006M12GM3 - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-CAB006M12GM3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB006M12GM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB006M12GM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB006M12GM3
Silicon Carbide MOSFET Modules CAB006M12GM3
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Applications EV Chargers Solar High-Efficiency Converters / Inverters Motor and Traction Drives Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation

Applications

  • EV Chargers
  • Solar
  • High-Efficiency Converters / Inverters
  • Motor and Traction Drives
  • Smart-Grid / Grid-Tied Distributed Generation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAB006M12GM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB006M12GM3-ND
FET, MOSFET Arrays 1697-CAB006M12GM3-ND
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) Chassis Mount

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) Chassis Mount

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB006M12GM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB006M12GM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB006M12GM3
SIC 2N-CH 1200V

SIC 2N-CH 1200V

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number CAB006M12GM3 1697-CAB006M12GM3-ND CAB006M12GM3
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type GM3 Module Module
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