SIC, MOSFET, 350M,1200V, TO-263-
SIC, MOSFET, 350M,1200V, TO-263-
SIC, MOSFET, 350M,1200V, TO-263-
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications. Based on 3rd generation MOSFET technology, the C3M0350120J includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.
Features
Benefits
Applications
| DigiKey | Richardson RFPD | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1697-C3M0350120J-TRCT-ND | C3M0350120J-TR |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs |
| Polarity | N-Channel |