Wolfspeed Single FETs, MOSFETs C3M0060065J-TR

Description
SIC, MOSFET, 60M, 650V, TO-263-7
Request a Quote Datasheet
Description
SIC, MOSFET, 60M, 650V, TO-263-7
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-C3M0060065J-TRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0060065J-TRDKR-ND
SIC, MOSFET, 60M, 650V, TO-263-7

SIC, MOSFET, 60M, 650V, TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0060065J-TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-TR-ND
Single FETs, MOSFETs 1697-C3M0060065J-TR-ND
SIC, MOSFET, 60M, 650V, TO-263-7

SIC, MOSFET, 60M, 650V, TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0060065J-TRCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-TRCT-ND
Single FETs, MOSFETs 1697-C3M0060065J-TRCT-ND
SIC, MOSFET, 60M, 650V, TO-263-7

SIC, MOSFET, 60M, 650V, TO-263-7

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0060065J-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0060065J-TR
Silicon Carbide MOSFETs C3M0060065J-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications EV charging Server power supplies Solar PV inverters UPS DC/DC converters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd Generation SiC MOSFET technology
  • Low inductance package with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Easy to parallel and simple to drive
  • Enable new hard switching PFC topologies (Totem-Pole)

Applications

  • EV charging
  • Server power supplies
  • Solar PV inverters
  • UPS
  • DC/DC converters
Supplier's Site Datasheet

Technical Specifications

  DigiKey Richardson RFPD
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1697-C3M0060065J-TRDKR-ND C3M0060065J-TR
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs
Polarity N-Channel
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