Wolfspeed Silicon Carbide MOSFETs C3M0060065J-TR

Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications EV charging Server power supplies Solar PV inverters UPS DC/DC converters
  • Silicon Carbide MOSFETs - C3M0060065J-TR - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0060065J-TRDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0060065J-TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1697-C3M0060065J-TRCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications EV charging Server power supplies Solar PV inverters UPS DC/DC converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0060065J-TR - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0060065J-TR
Silicon Carbide MOSFETs C3M0060065J-TR
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology Low inductance package with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications EV charging Server power supplies Solar PV inverters UPS DC/DC converters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd Generation SiC MOSFET technology
  • Low inductance package with separate driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
  • Easy to parallel and simple to drive
  • Enable new hard switching PFC topologies (Totem-Pole)

Applications

  • EV charging
  • Server power supplies
  • Solar PV inverters
  • UPS
  • DC/DC converters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0060065J-TRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0060065J-TRDKR-ND
SIC, MOSFET, 60M, 650V, TO-263-7

SIC, MOSFET, 60M, 650V, TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0060065J-TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-TR-ND
Single FETs, MOSFETs 1697-C3M0060065J-TR-ND
SIC, MOSFET, 60M, 650V, TO-263-7

SIC, MOSFET, 60M, 650V, TO-263-7

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0060065J-TRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0060065J-TRCT-ND
Single FETs, MOSFETs 1697-C3M0060065J-TRCT-ND
SIC, MOSFET, 60M, 650V, TO-263-7

SIC, MOSFET, 60M, 650V, TO-263-7

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number C3M0060065J-TR 1697-C3M0060065J-TRDKR-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.0600 ohms
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