Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
Manufacturer: Microchip Technology
Win Source Part Number: 911619-APT10045JLL
Series: POWER MOS 7®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 1000 V 21A (Tc) 460W (Tc) Chassis Mount ISOTOP®
Package: SOT-227-4, miniBLOC
Package: Tube
Mounting: Chassis Mount
Family Name: APT10045
Categories: Discrete Semiconductor Products
Case / Package: ISOTOP®
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 28 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 1000V 21A (Tc) 460W (Tc) Chassis Mount ISOTOP®
MOSFET N-CH 1000V 21A ISOTOP
| Richardson RFPD | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | APT10045JLL | 911619-APT10045JLL | APT10045JLL-ND | APT10045JLL |
| Product Name | Power MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT10045JLL | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.4500 ohms |
