N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-3
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features
Benefits
Applications
SICFET N-CH 650V 120A TO247-3
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1697-C3M0015065D-ND | C3M0015065D | C3M0015065D |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |