Suppliers

Company

Product

Description

Supplier Links

DigiKey

Thief River Falls, MN, United States

Single FETs, MOSFETs
1697-C3M0015065D-ND

Single FETs, MOSFETs 1697-C3M0015065D-ND

N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-3

Buy Now

Datasheet

Richardson RFPD

Downers Grove, IL, United States

Silicon Carbide MOSFETs
C3M0015065D

Silicon Carbide MOSFETs C3M0015065D

Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd Generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole) Applications EV charging Solar PV Inverters UPS SMPS DC/DC converters

Supplier's Site

Datasheet

Shenzhen Shengyu Electronics Technology Limited

Futian, China

Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0015065D

Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0015065D

SICFET N-CH 650V 120A TO247-3

Supplier's Site

Technical Specifications

	DigiKey	Richardson RFPD	Shenzhen Shengyu Electronics Technology Limited
Product Category	Transistors	Metal-Oxide Semiconductor FET (MOSFET)	RF Transistors
Product Number	1697-C3M0015065D-ND	C3M0015065D	C3M0015065D
Product Name	Single FETs, MOSFETs	Silicon Carbide MOSFETs	Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity	N-Channel