Silicon Carbide, Half-Bridge Module
Technical Features
High Power Density Footprint
High Junction Temperature (175 C) Operation
Low-Inductance (6.7 nH) Design
Implements Wolfspeed’s Third Generation SiC MOSFET Technology
Silicon Nitride Insulator and Copper Baseplate
Advanced Direct Cooling Baseplate
Typical Applications
Motor and Motion Control
Vehicle Fast Chargers
Uninterruptable Power Supplies
Smart-Grid / Grid-Tied Distributed Generation
Traction Drives
E-mobility
System Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low-inductance design.
Isolated, integrated temperature sensing enables high-level temperature protection.
Dedicated high-side Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
Silicon Carbide, Half-Bridge Module
Technical Features
- High Power Density Footprint
- High Junction Temperature (175 C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Wolfspeed’s Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate
- Advanced Direct Cooling Baseplate
Typical Applications
- Motor and Motion Control
- Vehicle Fast Chargers
- Uninterruptable Power Supplies
- Smart-Grid / Grid-Tied Distributed Generation
- Traction Drives
- E-mobility
System Benefits
- Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low-inductance design.
- Isolated, integrated temperature sensing enables high-level temperature protection.
- Dedicated high-side Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
