Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single C3M0040120J1

Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324330-C3M0040120J1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Power Dissipation (Max): 272W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 67 HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0040120J1,1 697-C3M0040120J1 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324330-C3M0040120J1 - Win Source Electronics
    Win Source Electronics
  • Silicon Carbide MOSFETs - C3M0040120J1 - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0040120J1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0040120J1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324330-C3M0040120J1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Power Dissipation (Max): 272W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 67 HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0040120J1,1 697-C3M0040120J1 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 3 (168 Hours)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324330-C3M0040120J1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324330-C3M0040120J1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324330-C3M0040120J1
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324330-C3M0040120J1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Surface Mount Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V Vgs(th) (Max) @ Id: 3.6V @ 9.2mA Power Dissipation (Max): 272W (Tc) Supplier Device Package: TO-263-7 Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA ECCN: EAR99 Fake Threat In the Open Market: 67 HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0040120J1,1 697-C3M0040120J1 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 3 (168 Hours)

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324330-C3M0040120J1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 9.2mA
Power Dissipation (Max): 272W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 67
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0040120J1,1697-C3M0040120J1
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 3 (168 Hours)

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0040120J1 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0040120J1
Silicon Carbide MOSFETs C3M0040120J1
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter and Telecom Power Supplies EV Battery Chargers High voltage DC/DC converters Energy Storage Systems Solar Inverters

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Datacenter and Telecom Power Supplies
  • EV Battery Chargers
  • High voltage DC/DC converters
  • Energy Storage Systems
  • Solar Inverters
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1200V MOSFET Transistor
278-C3M0040120J1
1200V MOSFET Transistor 278-C3M0040120J1
1200V 40 M SIC MOSFET Product overview: C3M0040120J1 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0040120J1 can be used for catalog matching and distributor lookup.

1200V 40 M SIC MOSFET Product overview: C3M0040120J1 from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0040120J1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0040120J1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0040120J1-ND
Single FETs, MOSFETs 1697-C3M0040120J1-ND
N-Channel 1200V 64A (Tc) 272W (Tc) Surface Mount TO-263-7

N-Channel 1200V 64A (Tc) 272W (Tc) Surface Mount TO-263-7

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0040120J1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0040120J1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0040120J1
1200V 40 M SIC MOSFET

1200V 40 M SIC MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1324330-C3M0040120J1 C3M0040120J1 278-C3M0040120J1 1697-C3M0040120J1-ND C3M0040120J1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Silicon Carbide MOSFETs 1200V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 272000 milliwatts 272 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-7L XL Tube TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packing Method Tube; Tube Tube Tube; Tube
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