Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Alternative Parts (Cross-Reference): Cross
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: POWER MOS V®
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
N-Channel 200V 97A (Tc) Chassis Mount ISOTOP®
MOSFET N-CH 200V 97A ISOTOP
| Richardson RFPD | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | APT20M22JVR | APT20M22JVR-ND | APT20M22JVR | |
| Product Name | Power MOSFET Transistor | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.0220 ohms |
