Wolfspeed Single FETs, MOSFETs C3M0075120K-A

Description
N-Channel 1200V 32A (Tc) 136W (Tc) Through Hole TO-247-4L
  • Single FETs, MOSFETs - 1697-C3M0075120K-A-ND - DigiKey
    DigiKey
  • Silicon Carbide MOSFETs - C3M0075120K-A - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - C3M0075120K-A - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0075120K-A - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
N-Channel 1200V 32A (Tc) 136W (Tc) Through Hole TO-247-4L
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1697-C3M0075120K-A-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0075120K-A-ND
Single FETs, MOSFETs 1697-C3M0075120K-A-ND
N-Channel 1200V 32A (Tc) 136W (Tc) Through Hole TO-247-4L

N-Channel 1200V 32A (Tc) 136W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0075120K-A - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0075120K-A
Silicon Carbide MOSFETs C3M0075120K-A
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0075120K-A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0075120K-A
Single FETs, MOSFETs C3M0075120K-A
75M 1200V 175C SIC FET

75M 1200V 175C SIC FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0075120K-A - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0075120K-A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0075120K-A
75M 1200V 175C SIC FET

75M 1200V 175C SIC FET

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD ODG (Origin Data Global) Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1697-C3M0075120K-A-ND C3M0075120K-A C3M0075120K-A C3M0075120K-A
Product Name Single FETs, MOSFETs Silicon Carbide MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4 TO-247; TO-247-4
rDS(on) 0.0750 ohms
V(BR)DSS 1200 volts
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