Microchip Technology, Inc. Power MOSFET Transistor APT20M20LLLG

Description
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
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Description
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
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Power MOSFET Transistor - APT20M20LLLG - Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT20M20LLLG
Power MOSFET Transistor APT20M20LLLG
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

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Technical Specifications

  Richardson RFPD
Product Category Power MOSFET
Product Number APT20M20LLLG
Product Name Power MOSFET Transistor
rDS(on) 0.0200 ohms
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