N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2PAK-7
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
SICFET N-CH 900V 35A D2PAK-7 Product overview: C3M0065090J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0065090J can be used for catalog matching and distributor lookup.
SICFET N-CH 900V 35A D2PAK-7
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325238-C3M0065090J
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Power Dissipation (Max): 113W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 73
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0065090J,16
Base Product Number: C3M0065090
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
MOSFET G3 SiC MOSFET 900V, 65mOhm
MOSFET, N-CH, 900V, 35A, TO-263; MOSFET Module Configuration:Single
SICFET N-CH 900V 35A D2PAK-7
| DigiKey | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1697-C3M0065090J-ND | C3M0065090J | 278-C3M0065090J | C3M0065090J | 1325238-C3M0065090J | C3M0065090J | 98Y6017 | C3M0065090J |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs | 900V 35A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 900V, 35A, To-263; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | Tube | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-3; TO-263 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| rDS(on) | 0.0650 ohms | |||||||
| MOSFET Operating Mode | Enhancement |