Silicon Carbide Power MOSFET N-Channel Enhancement Mode
High blocking voltage with low On-resistance
High speed switching with low capacitances
12V...18V / 0V VGS compatible with most flyback controllers
Ultra-low drain-gate capacitance
Qualified to operate under high humidity and high temperature environmental conditions
Halogen free, RoHS compliant
Benefits
Smooth switching waveforms
Reduce switching losses and minimize gate ringing
Higher system efficiency
Increase system switching frequency
Increase system reliability
Applications
Auxillary power supplies
Switch Mode Power Supplies
High-Voltage capacitive loads
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- 12V...18V / 0V VGS compatible with most flyback controllers
- Ultra-low drain-gate capacitance
- Qualified to operate under high humidity and high temperature environmental conditions
- Halogen free, RoHS compliant
Benefits
- Smooth switching waveforms
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Increase system switching frequency
- Increase system reliability
Applications
- Auxillary power supplies
- Switch Mode Power Supplies
- High-Voltage capacitive loads
