Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
N-Channel 1200V 26A (Tc) 700W (Tc) Chassis Mount SOT-227 (ISOTOP®)
MOSFET N-CH 1200V 26A SOT227
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors |
| Product Number | APT12040JVR | 150-APT12040JVR-ND | APT12040JVR |
| Product Name | Power MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| rDS(on) | 0.4000 ohms |
