Microchip Technology, Inc. Silicon Carbide MOSFET Modules APTMC60TL11CT3AG

Description
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
  • Silicon Carbide MOSFET Modules - APTMC60TL11CT3AG - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTMC60TL11CT3AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - APTMC60TL11CT3AG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
APTMC60TL11CT3AG
Silicon Carbide MOSFET Modules APTMC60TL11CT3AG
Application Uninterruptible Power Supplies Features SiC Power MOSFET Low RDS(on) High temperature performance SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant

Application

  • Uninterruptible Power Supplies

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • SiC Schottky Diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature Independent switching behavior
    • Positive temperature coefficient on VF
  • Very low stray inductance
  • Kelvin emitter for easy drive
  • Internal thermistor for temperature monitoring
  • High level of integration
  • AlN substrate for improved thermal performance

Benefits

  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Low profile
  • RoHS Compliant
Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTMC60TL11CT3AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTMC60TL11CT3AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTMC60TL11CT3AG
MOSFET 4N-CH 1200V 28A SP3

MOSFET 4N-CH 1200V 28A SP3

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number APTMC60TL11CT3AG APTMC60TL11CT3AG
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP3F
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