C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.
Features
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost.
SICFET N-CH 1700V 4.9A TO247-3 Product overview: C2M1000170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M1000170D can be used for catalog matching and distributor lookup.
N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3
SICFET N-CH 1700V 4.9A TO247-3
Win Source Part Number: 1277484-C2M1000170D
Category: Discrete Semiconductor Products>Transistors
Series: Z-FET™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V
SICFET N-CH 1700V 4.9A TO247-3
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V RoHS Compliant: Yes
| Wolfspeed | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | C2M1000170D | C2M1000170D | 278-C2M1000170D | C2M1000170D-ND | C2M1000170D | 1277484-C2M1000170D | C2M1000170D | C2M1000170D | 12X8366 |
| Product Name | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Silicon Carbide MOSFETs | 1700V 4.9A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed |
| Transistor Technology / Material | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-247-3 | TO-247; TO-247-3 | Tube | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 | |
| rDS(on) | 1 ohms | ||||||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement |
