C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.
Features
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost.
SICFET N-CH 1700V 4.9A TO247-3
N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3
SICFET N-CH 1700V 4.9A TO247-3 Product overview: C2M1000170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M1000170D can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277484-C2M1000170D
Category: Discrete Semiconductor Products>Transistors
Series: Z-FET™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V
Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V RoHS Compliant: Yes
SICFET N-CH 1700V 4.9A TO247-3
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
| Wolfspeed | Richardson RFPD | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C2M1000170D | C2M1000170D | C2M1000170D | C2M1000170D-ND | 278-C2M1000170D | 1277484-C2M1000170D | 12X8366 | C2M1000170D | C2M1000170D |
| Product Name | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Silicon Carbide MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 1700V 4.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Transistor Technology / Material | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | SiCFET (Silicon Carbide) | Silicon Carbide | ||||||
| Package Type | TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | Tube | TO-247; SOT3 | TO-3 | TO-247; TO-247-3 | |
| rDS(on) | 1 ohms | ||||||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 1700 volts | 1700 volts |
