The C2M1000170D is a silicon carbide N-channel enhancement mode MOSFET designed for high-voltage switching applications such as auxiliary and switch mode power supplies. It is packaged in a TO-247-3L case with dimensions of 20.75-21.05 mm in D, 15.75-16.13 mm in E, and 19.73-20.48 mm in L. It rated for a drain-source voltage of 1700 V, with a maximum continuous drain current of 3.5 A at 25°C and 69 W power dissipation. The device features a typical on-state resistance of 1.04 Ω at 25°C and 1.4 Ω at 150°C, a gate-source voltage range of -5 V to +20 V, and a thermal resistance from junction to case of 1.7-1.8 °C/W. Operating junction and storage temperatures range from -55°C to +150°C. The device is RoHS compliant and halogen-free.
C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.
Features
Win Source Part Number: 1277484-C2M1000170D
Category: Discrete Semiconductor Products>Transistors
Series: Z-FET™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V
N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3
SICFET N-CH 1700V 4.9A TO247-3 Product overview: C2M1000170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M1000170D can be used for catalog matching and distributor lookup.
Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V RoHS Compliant: Yes
SICFET N-CH 1700V 4.9A TO247-3
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
SICFET N-CH 1700V 4.9A TO247-3
| Wolfspeed | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C2M1000170D | 1277484-C2M1000170D | C2M1000170D-ND | 278-C2M1000170D | 12X8366 | C2M1000170D | C2M1000170D | C2M1000170D |
| Product Name | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 1700V 4.9A MOSFET Transistor | Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Silicon Carbide | SiCFET (Silicon Carbide) | |||||
| Package Type | TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | Tube | TO-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 1700 volts | 1700 volts |
