C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.
Features
N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3
Win Source Part Number: 1277484-C2M1000170D
Category: Discrete Semiconductor Products>Transistors
Series: Z-FET™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V
SICFET N-CH 1700V 4.9A TO247-3
N-channel SiC MOSFET 1.7kV 5A TO247
N-channel SiC MOSFET 1.7kV 5A TO247
N-channel SiC MOSFET 1.7kV 5A TO247
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost.
Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V RoHS Compliant: Yes
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
SICFET N-CH 1700V 4.9A TO247-3
| Wolfspeed | DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | Richardson RFPD | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C2M1000170D | C2M1000170D-ND | 1277484-C2M1000170D | C2M1000170D | 9047345 | C2M1000170D | 12X8366 | C2M1000170D | C2M1000170D |
| Product Name | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFETs | Silicon Carbide MOSFETs | Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 1700 volts | 1700 volts | |||||||
| IDSS | 4900 milliamps | 5000 milliamps |
