Wolfspeed 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET C2M1000170D

Description
C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Halogen-free, RoHS-compliant
Request a Quote Datasheet
Description
C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Halogen-free, RoHS-compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET - C2M1000170D - Wolfspeed
Durham, NC, United States
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET
C2M1000170D
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET C2M1000170D
C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Halogen-free, RoHS-compliant

C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc.

Features

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Halogen-free, RoHS-compliant
Supplier's Site Datasheet
Single FETs, MOSFETs - C2M1000170D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C2M1000170D-ND
Single FETs, MOSFETs C2M1000170D-ND
N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3

N-Channel 1700V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C2M1000170D
Silicon Carbide MOSFETs C2M1000170D
C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost. High blocking voltage assure: Safe operation in electrically noisy systems Simpler design: remove snubbers, low part count Avalanche rating for system ruggedness, reliability Reduced thermal design complexity, cost Fast switching system size, weight and cost

C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost.

  • High blocking voltage assure:
    • Safe operation in electrically noisy systems
    • Simpler design: remove snubbers, low part count
  • Avalanche rating for system ruggedness, reliability
  • Reduced thermal design complexity, cost
  • Fast switching system size, weight and cost
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277484-C2M1000170D - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277484-C2M1000170D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277484-C2M1000170D
Win Source Part Number: 1277484-C2M1000170D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Z-FET™ Package: Tube Standard Package: 30 Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 69W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V Vgs (Max): +25V, -10V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Wolfspeed, Inc. Base Product Number: C2M1000170 Drive Voltage (Max Rds On, Min Rds On): 20V

Win Source Part Number: 1277484-C2M1000170D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Z-FET™
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 191 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V

Buy Now Datasheet
Singapore, Singapore
1700V 4.9A MOSFET Transistor
278-C2M1000170D
1700V 4.9A MOSFET Transistor 278-C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3 Product overview: C2M1000170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M1000170D can be used for catalog matching and distributor lookup.

SICFET N-CH 1700V 4.9A TO247-3 Product overview: C2M1000170D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 4.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M1000170D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed - 12X8366 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed
12X8366
Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed 12X8366
Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm

MOSFET SIC MOSFET 1700V RDS ON 1 Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M1000170D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C2M1000170D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3

SICFET N-CH 1700V 4.9A TO247-3

Supplier's Site
Single FETs, MOSFETs - C2M1000170D - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C2M1000170D
Single FETs, MOSFETs C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3

SICFET N-CH 1700V 4.9A TO247-3

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed DigiKey Richardson RFPD Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number C2M1000170D C2M1000170D-ND C2M1000170D 1277484-C2M1000170D 278-C2M1000170D 12X8366 C2M1000170D C2M1000170D C2M1000170D
Product Name 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET Single FETs, MOSFETs Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1700V 4.9A MOSFET Transistor Power Mosfet, N Channel, 4.9 A, 1.7 Kv, 0.95 Ohm, 20 V, 2.4 V Rohs Compliant Wolfspeed MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Transistor Technology / Material 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3 Tube TO-3 TO-247; TO-247-3 TO-247; TO-247-3
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
rDS(on) 1 ohms
MOSFET Operating Mode Enhancement
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