Wolfspeed Silicon Carbide MOSFET Modules CBB011M12GM4T

Description
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
  • Silicon Carbide MOSFET Modules - CBB011M12GM4T - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-CBB011M12GM4T-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CBB011M12GM4T - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CBB011M12GM4T
Silicon Carbide MOSFET Modules CBB011M12GM4T
Technical Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Pre-Applied Thermal Interface Material Features Gen4 Technology with Soft Body Diode Typical Applications EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost

Technical Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation
  • Pre-Applied Thermal Interface Material
  • Features Gen4 Technology with Soft Body Diode

Typical Applications

  • EV Chargers
  • High-Efficiency Converters / Inverters
  • Renewable Energy
  • Smart-Grid / Grid-Tied Distributed Generation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CBB011M12GM4T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CBB011M12GM4T-ND
FET, MOSFET Arrays 1697-CBB011M12GM4T-ND
SIC, MODULE, 11M, 1200V, 48 MM,

SIC, MODULE, 11M, 1200V, 48 MM,

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number CBB011M12GM4T 1697-CBB011M12GM4T-ND
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays
Package Type GM4 Module
Unlock Full Specs
to access all available technical data