SICFET N-CH 1700V 5.3A D2PAK-7
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325255-C2M1000170J-
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 800
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
Power Dissipation (Max): 78W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Base Product Number: C2M1000170
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: RoHS Compliant
N-Channel 1700V 5.3A (Tc) 78W (Tc) Surface Mount D2PAK-7
SICFET N-CH 1700V 5.3A D2PAK-7
SICFET N-CH 1700V 5.3A D2PAK-7
SICFET N-CH 1700V 5.3A D2PAK-7 Product overview: C2M1000170J-TR from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C2M1000170J-TR can be used for catalog matching and distributor lookup.
Features
Benefits
Applications
MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
SICFET N-CH 1700V 5.3A D2PAK-7
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Richardson RFPD | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | C2M1000170J-TR | 1325255-C2M1000170J-TR | 1697-C2M1000170J-TR-ND | 278-C2M1000170J-TR | C2M1000170J-TR | C2M1000170J-TR | C2M1000170J-TR |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 1700V 5.3A MOSFET Transistor | Silicon Carbide MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||||
| V(BR)DSS | 1700 volts | 1700 volts | |||||
| IDSS | 5300 milliamps | ||||||
| PD | 78000 milliwatts | 78 milliwatts |
