The C3M0075120D-A is a silicon carbide power MOSFET designed for high-efficiency power conversion in applications such as renewable energy systems, electric vehicle battery chargers, and high-voltage DC/DC converters. It is packaged in a TO-247-3 case with a mounting torque of 1 Nm and operates with a junction and storage temperature range from -40°C to 175°C. The device features a drain-source voltage rating of 1200 V, a continuous drain current of 23 A at 100°C, and a typical drain-source on-state resistance of 75 mΩ at 25°C with a gate-source voltage of 15 V. Thermal resistance from junction to case is 0.97°C/W, and it complies with RoHS standards. Switching performance includes a turn-off energy of 186 μJ at 800 V and 20 A, and a body diode reverse recovery charge of 279 nC at 150°C.
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Download our LTspice models to get started or click here to request more information.
Features
MOSFET 1.2kV 75mOHMS G3 SiC MOSFET
MOSFET 1.2kV 75mOHMS G3 SiC MOSFET
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325252-C3M0075120D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 113.6W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 73
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0075120D,C3M
Base Product Number: C3M0075120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3
SICFET N-CH 1200V 30A TO247-3 Product overview: C3M0075120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0075120D can be used for catalog matching and distributor lookup.
MOSFET 1.2kV 75mOHMS G3 SiC MOSFET
SICFET N-CH 1200V 30A TO247-3
SICFET N-CH 1200V 30A TO247-3
MOSFET, N-CH, 1.2KV, 30A, TO-247; MOSFET Module Configuration:Single
| Wolfspeed | RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0075120D | 1923376 | 1325252-C3M0075120D | 1697-C3M0075120D-ND | 278-C3M0075120D | C3M0075120D | C3M0075120D | C3M0075120D | 99AC9000 |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 1200V 30A MOSFET Transistor | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-247-3 | TO-247; To-247 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | Tube | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Number of units in IC | 1 |
