The C3M0075120D-A is a silicon carbide power MOSFET designed for high-efficiency power conversion in applications such as renewable energy systems, electric vehicle battery chargers, and high-voltage DC/DC converters. It is packaged in a TO-247-3 case with a mounting torque of 1 Nm and operates with a junction and storage temperature range from -40°C to 175°C. The device features a drain-source voltage rating of 1200 V, a continuous drain current of 23 A at 100°C, and a typical drain-source on-state resistance of 75 mΩ at 25°C with a gate-source voltage of 15 V. Thermal resistance from junction to case is 0.97°C/W, and it complies with RoHS standards. Switching performance includes a turn-off energy of 186 μJ at 800 V and 20 A, and a body diode reverse recovery charge of 279 nC at 150°C.
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Download our LTspice models to get started or click here to request more information.
Features
N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325252-C3M0075120D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 113.6W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 73
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0075120D,C3M
Base Product Number: C3M0075120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
SICFET N-CH 1200V 30A TO247-3 Product overview: C3M0075120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0075120D can be used for catalog matching and distributor lookup.
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MOSFET, N-CH, 1.2KV, 30A, TO-247; MOSFET Module Configuration:Single
| Wolfspeed | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0075120D | 1697-C3M0075120D-ND | 1325252-C3M0075120D | 278-C3M0075120D | 1923376 | C3M0075120D | C3M0075120D | C3M0075120D | 99AC9000 |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 1200V 30A MOSFET Transistor | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | Tube | TO-247; To-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 1200 volts | 1200 volts |
