Wolfspeed Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0075120D

Description
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Download our LTspice models to get started or click here to request more information. Features Minimum of 1200V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0075120D - Wolfspeed
    Wolfspeed
  • Single FETs, MOSFETs - C3M0075120D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Silicon Carbide MOSFETs - C3M0075120D - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0075120D-ND - DigiKey
    DigiKey
  • MOSFETs - 1923376 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1923523 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325252-C3M0075120D - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed - 99AC9000 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0075120D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Download our LTspice models to get started or click here to request more information. Features Minimum of 1200V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode - C3M0075120D - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
C3M0075120D
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode C3M0075120D
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Download our LTspice models to get started or click here to request more information. Features Minimum of 1200V Vbr across entire operating temperature range High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Download our LTspice models to get started or click here to request more information.

Features

  • Minimum of 1200V Vbr across entire operating temperature range
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Single FETs, MOSFETs - C3M0075120D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0075120D
Single FETs, MOSFETs C3M0075120D
SICFET N-CH 1200V 30A TO247-3

SICFET N-CH 1200V 30A TO247-3

Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0075120D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0075120D
Silicon Carbide MOSFETs C3M0075120D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0075120D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0075120D-ND
Single FETs, MOSFETs 1697-C3M0075120D-ND
N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3

N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3

Buy Now Datasheet
MOSFETs - 1923376 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923376
MOSFETs 1923376
MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

Supplier's Site
MOSFETs - 1923523 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923523
MOSFETs 1923523
MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
1200V 30A MOSFET Transistor
278-C3M0075120D
1200V 30A MOSFET Transistor 278-C3M0075120D
SICFET N-CH 1200V 30A TO247-3 Product overview: C3M0075120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0075120D can be used for catalog matching and distributor lookup.

SICFET N-CH 1200V 30A TO247-3 Product overview: C3M0075120D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0075120D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325252-C3M0075120D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325252-C3M0075120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325252-C3M0075120D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325252-C3M0075120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 113.6W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V Vgs (Max): +19V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 73 HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0075120D,C3M 0075120D-ND,-3312-C3 M0075120D Base Product Number: C3M0075120 Drive Voltage (Max Rds On, Min Rds On): 15V Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325252-C3M0075120D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 113.6W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 73
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0075120D,C3M0075120D-ND,-3312-C3M0075120D
Base Product Number: C3M0075120
Drive Voltage (Max Rds On, Min Rds On): 15V
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed - 99AC9000 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed
99AC9000
Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed 99AC9000
MOSFET, N-CH, 1.2KV, 30A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 30A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0075120D
MOSFET C3M0075120D
MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0075120D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0075120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0075120D
SICFET N-CH 1200V 30A TO247-3

SICFET N-CH 1200V 30A TO247-3

Supplier's Site

Technical Specifications

  Wolfspeed ODG (Origin Data Global) Richardson RFPD DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C3M0075120D C3M0075120D C3M0075120D 1697-C3M0075120D-ND 1923376 278-C3M0075120D 1325252-C3M0075120D 99AC9000 C3M0075120D C3M0075120D
Product Name Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Single FETs, MOSFETs Silicon Carbide MOSFETs Single FETs, MOSFETs MOSFETs 1200V 30A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, N-Ch, 1.2Kv, 30A, To-247; Mosfet Module Configuration Wolfspeed MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; To-247 Tube TO-247; SOT3; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 1200 volts 1200 volts
IDSS 30000 milliamps 30000 milliamps
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