Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single APT6015LVRG

Win Source Part Number: 1045819-APT6015LVRG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: POWER MOS V®
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Alternative Parts (Cross-Reference): FQL40N50; FQL40N50F; FQL50N40; FDL100N50F;
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT6015

Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

N-Channel 600V 38A (Tc) Through Hole TO-264 [L]