Wolfspeed Silicon Carbide MOSFET Modules CAS530M12BM3

Description
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS
  • Silicon Carbide MOSFET Modules - CAS530M12BM3 - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - 1697-CAS530M12BM3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAS530M12BM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAS530M12BM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAS530M12BM3
Silicon Carbide MOSFET Modules CAS530M12BM3
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry standard 62mm Footprint Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS

1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features

  • Industry standard 62mm Footprint
  • Ultra Low Loss, High-Frequency Operation
  • Zero Reverse Recovery from Diodes
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Copper Baseplate and Aluminum Nitride Insulator

System Benefits

  • 62mm Form Factor Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC

Applications

  • Induction Heating
  • Motor Drives
  • Renewables
  • Railway Auxiliary and Traction
  • EV Fast Charging
  • UPS and SMPS
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAS530M12BM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAS530M12BM3-ND
FET, MOSFET Arrays 1697-CAS530M12BM3-ND
MOSFET 2N-CH 1200V 630A

MOSFET 2N-CH 1200V 630A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAS530M12BM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAS530M12BM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAS530M12BM3
SIC 2N-CH 1200V 630A

SIC 2N-CH 1200V 630A

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number CAS530M12BM3 1697-CAS530M12BM3-ND CAS530M12BM3
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 62mm Module
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