Wolfspeed Silicon Carbide MOSFET Modules CAB450M12XM3

Description
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as EV chargers, UPS, and traction drives. Features High Power Density Footprint High Temperature (175 C) Operation Low Inductance (6.5 nH) Design Implements Conduction-Optimized Third Generation MOSFET Technology Benefits Terminal Layout Simplifies Bus Bar Design Integrated Temperature Sensing Dedicated Drain-Kelvin Pin Silicon Nitride Insulator and Copper Baseplate Applications Motor & Traction Drives UPS EV Chargers Associated Product: CGD12HBXMP
  • Silicon Carbide MOSFET Modules - CAB450M12XM3 - Richardson RFPD
    Richardson RFPD
  • FET, MOSFET Arrays - CAB450M12XM3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - 1697-CAB450M12XM3-ND - DigiKey
    DigiKey
  • MOSFETs - 1923386 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB450M12XM3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Module, Dual N-Ch, 1.2Kv, 450A; Mosfet Module Configuration Wolfspeed - 21AH3192 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as EV chargers, UPS, and traction drives. Features High Power Density Footprint High Temperature (175 C) Operation Low Inductance (6.5 nH) Design Implements Conduction-Optimized Third Generation MOSFET Technology Benefits Terminal Layout Simplifies Bus Bar Design Integrated Temperature Sensing Dedicated Drain-Kelvin Pin Silicon Nitride Insulator and Copper Baseplate Applications Motor & Traction Drives UPS EV Chargers Associated Product: CGD12HBXMP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB450M12XM3 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB450M12XM3
Silicon Carbide MOSFET Modules CAB450M12XM3
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as EV chargers, UPS, and traction drives. Features High Power Density Footprint High Temperature (175 C) Operation Low Inductance (6.5 nH) Design Implements Conduction-Optimized Third Generation MOSFET Technology Benefits Terminal Layout Simplifies Bus Bar Design Integrated Temperature Sensing Dedicated Drain-Kelvin Pin Silicon Nitride Insulator and Copper Baseplate Applications Motor & Traction Drives UPS EV Chargers Associated Product: CGD12HBXMP

Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as EV chargers, UPS, and traction drives.

Features

  • High Power Density Footprint
  • High Temperature (175 C) Operation
  • Low Inductance (6.5 nH) Design
  • Implements Conduction-Optimized Third Generation MOSFET Technology

Benefits

  • Terminal Layout Simplifies Bus Bar Design
  • Integrated Temperature Sensing
  • Dedicated Drain-Kelvin Pin
  • Silicon Nitride Insulator and Copper Baseplate

Applications

  • Motor & Traction Drives
  • UPS
  • EV Chargers

Associated Product: CGD12HBXMP

Supplier's Site Datasheet
FET, MOSFET Arrays - CAB450M12XM3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
CAB450M12XM3
FET, MOSFET Arrays CAB450M12XM3
1.2KV 450A SIC HALF BRIDGE MOD

1.2KV 450A SIC HALF BRIDGE MOD

Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAB450M12XM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB450M12XM3-ND
FET, MOSFET Arrays 1697-CAB450M12XM3-ND
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 450A 850W Chassis Mount Module

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 450A 850W Chassis Mount Module

Buy Now Datasheet
MOSFETs - 1923386 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1923386
MOSFETs 1923386
MOSFET SiC HalfBridgeModule 1.2kV 450A

MOSFET SiC HalfBridgeModule 1.2kV 450A

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CAB450M12XM3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CAB450M12XM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CAB450M12XM3
SIC 2N-CH 1200V 450A MODULE

SIC 2N-CH 1200V 450A MODULE

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
CAB450M12XM3
MOSFET CAB450M12XM3
MOSFET SiC HalfBridgeModule 1.2kV 450A

MOSFET SiC HalfBridgeModule 1.2kV 450A

Buy Now Datasheet
Mosfet Module, Dual N-Ch, 1.2Kv, 450A; Mosfet Module Configuration Wolfspeed - 21AH3192 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Module, Dual N-Ch, 1.2Kv, 450A; Mosfet Module Configuration Wolfspeed
21AH3192
Mosfet Module, Dual N-Ch, 1.2Kv, 450A; Mosfet Module Configuration Wolfspeed 21AH3192
MOSFET MODULE, DUAL N-CH, 1.2KV, 450A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:450A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET MODULE, DUAL N-CH, 1.2KV, 450A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:450A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number CAB450M12XM3 CAB450M12XM3 1697-CAB450M12XM3-ND 1923386 CAB450M12XM3 CAB450M12XM3 21AH3192
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays FET, MOSFET Arrays MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Module, Dual N-Ch, 1.2Kv, 450A; Mosfet Module Configuration Wolfspeed
Package Type 80 x 53 x 19 mm Module Module TO-3
Polarity N-Channel; 2 N-Channel (Half Bridge)
Transistor Technology / Material Silicon Carbide (SiC) Sic
V(BR)DSS 1200 volts
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