1.2KV 450A SIC HALF BRIDGE MOD
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as EV chargers, UPS, and traction drives.
Features
Benefits
Applications
Associated Product: CGD12HBXMP
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 450A 850W Chassis Mount Module
MOSFET SiC HalfBridgeModule 1.2kV 450A
MOSFET MODULE, DUAL N-CH, 1.2KV, 450A; MOSFET Module Configuration:Half Bridge; Continuous Drain Current Id:450A; Drain Source Voltage Vds:1.2kV; No. of Pins:-; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET SiC HalfBridgeModule 1.2kV 450A
SIC 2N-CH 1200V 450A MODULE
| ODG (Origin Data Global) | Richardson RFPD | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CAB450M12XM3 | CAB450M12XM3 | 1697-CAB450M12XM3-ND | 1923386 | 21AH3192 | CAB450M12XM3 | CAB450M12XM3 |
| Product Name | FET, MOSFET Arrays | Silicon Carbide MOSFET Modules | FET, MOSFET Arrays | MOSFETs | Mosfet Module, Dual N-Ch, 1.2Kv, 450A; Mosfet Module Configuration Wolfspeed | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Half Bridge) | ||||||
| Transistor Technology / Material | Silicon Carbide (SiC) | Sic | |||||
| V(BR)DSS | 1200 volts | ||||||
| IDSS | 450000 milliamps | 450000 milliamps |