Wolfspeed Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode C3M0120090D

Description
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode - C3M0120090D - Wolfspeed
    Wolfspeed
  • Silicon Carbide MOSFETs - C3M0120090D - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325240-C3M0120090D - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - C3M0120090D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1697-C3M0120090D-ND - DigiKey
    DigiKey
  • MOSFETs - 9158849 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 9158849P - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1457049 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120090D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 900V, 23A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6018 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode - C3M0120090D - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode
C3M0120090D
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode C3M0120090D
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions. Features High speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Features

  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Silicon Carbide MOSFETs - C3M0120090D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120090D
Silicon Carbide MOSFETs C3M0120090D
Silicon Carbide Power MOSFET C3MTM MOSFET Technology Features New C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Lighting

Silicon Carbide Power MOSFET
C3MTM MOSFET Technology

Features

  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
  • Lighting
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325240-C3M0120090D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325240-C3M0120090D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325240-C3M0120090D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1325240-C3M0120090D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Power Dissipation (Max): 97W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V Vgs (Max): +18V, -8V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: 1697-C3M0120090D,C3M 0120090D-ND,-3312-C3 M0120090D Base Product Number: C3M0120090 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325240-C3M0120090D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 97W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Vgs (Max): +18V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0120090D,C3M0120090D-ND,-3312-C3M0120090D
Base Product Number: C3M0120090
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Single FETs, MOSFETs - C3M0120090D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0120090D
Single FETs, MOSFETs C3M0120090D
SICFET N-CH 900V 23A TO247-3

SICFET N-CH 900V 23A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0120090D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120090D-ND
Single FETs, MOSFETs 1697-C3M0120090D-ND
N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3

N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3

Buy Now Datasheet
MOSFETs - 9158849 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158849
MOSFETs 9158849
N-chan SiC MOSFET 900V 23A TO247

N-chan SiC MOSFET 900V 23A TO247

Supplier's Site
MOSFETs - 9158849P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9158849P
MOSFETs 9158849P
N-chan SiC MOSFET 900V 23A TO247

N-chan SiC MOSFET 900V 23A TO247

Supplier's Site
MOSFETs - 1457049 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1457049
MOSFETs 1457049
N-chan SiC MOSFET 900V 23A TO247

N-chan SiC MOSFET 900V 23A TO247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0120090D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0120090D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0120090D
SICFET N-CH 900V 23A TO247-3

SICFET N-CH 900V 23A TO247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C3M0120090D
MOSFET C3M0120090D
MOSFET G3 SiC MOSFET 900V, 120mOhm

MOSFET G3 SiC MOSFET 900V, 120mOhm

Buy Now Datasheet
Mosfet, N-Ch, 900V, 23A, To-247; Mosfet Module Configuration Wolfspeed - 98Y6018 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 23A, To-247; Mosfet Module Configuration Wolfspeed
98Y6018
Mosfet, N-Ch, 900V, 23A, To-247; Mosfet Module Configuration Wolfspeed 98Y6018
MOSFET, N-CH, 900V, 23A, TO-247; MOSFET Module Configuration:Single ; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 23A, TO-247; MOSFET Module Configuration:Single; Continuous Drain Current Id:23A; Drain Source Voltage Vds:900V; No. of Pins:3Pins; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Wolfspeed Richardson RFPD Win Source Electronics ODG (Origin Data Global) DigiKey RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0120090D C3M0120090D 1325240-C3M0120090D C3M0120090D 1697-C3M0120090D-ND 9158849 9158849P C3M0120090D C3M0120090D 98Y6018
Product Name Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 900V, 23A, To-247; Mosfet Module Configuration Wolfspeed
Transistor Technology / Material Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode SiCFET (Silicon Carbide) Silicon Carbide
Package Type TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; TO-247-3 TO-3; TO-247
rDS(on) 0.1200 ohms
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 900 volts
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