The C3M0120090D is a 900 V silicon carbide N-channel enhancement mode MOSFET in a TO-247-3 package, designed for high-efficiency power conversion in applications such as EV chargers, renewable energy systems, and DC/DC converters. It has a maximum continuous drain current of 15 A at 100 ℃, a drain-source on-state resistance of 120 mΩ at 25 ℃, and a thermal resistance from junction to case of 1.3 °C/W. The device operates with a gate-source voltage range of -4 V to +15 V and supports a maximum junction temperature of 150 ℃. It is RoHS compliant and features a fast intrinsic body diode with a reverse recovery charge of 127 nC at 150 ℃. The package dimensions are specified per the TO-247-3 standard with a mounting torque of 8.8 lbf-in for the M3 or 6-32 screw.
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
Features
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325240-C3M0120090D
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 97W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Vgs (Max): +18V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0120090D,C3M
Base Product Number: C3M0120090
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant
N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3
SICFET N-CH 900V 23A TO247-3 Product overview: C3M0120090D from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0120090D can be used for catalog matching and distributor lookup.
MOSFET G3 SiC MOSFET 900V, 120mOhm
MOSFET, N-CH, 900V, 23A, TO-247; MOSFET Module Configuration:Single
SICFET N-CH 900V 23A TO247-3
SICFET N-CH 900V 23A TO247-3
| Wolfspeed | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0120090D | 1325240-C3M0120090D | 1697-C3M0120090D-ND | 278-C3M0120090D | 9158849 | 9158849P | C3M0120090D | 98Y6018 | C3M0120090D | C3M0120090D |
| Product Name | Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 900V 23A MOSFET Transistor | MOSFETs | MOSFETs | MOSFET | Mosfet, N-Ch, 900V, 23A, To-247; Mosfet Module Configuration Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | SiCFET (Silicon Carbide) | |||||||
| Package Type | TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | Tube | TO-247; To-247 | TO-247; TO-247 | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| PD | 97 milliwatts | 97000 milliwatts |
