Wolfspeed Silicon Carbide MOSFETs C3M0120065J-TR

Description
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density. Features 3rd Generation (C3MTM) SiC MOSFET Technology Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Figures of Merit Low on-state resistance over temperature Low parasitic capacitances Robust and fast body diode with ultra-low reverse-recovery charge (Qrr) Wide range of operation junction temperature Target Applications Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters
Request a Quote Datasheet
Description
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density. Features 3rd Generation (C3MTM) SiC MOSFET Technology Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Figures of Merit Low on-state resistance over temperature Low parasitic capacitances Robust and fast body diode with ultra-low reverse-recovery charge (Qrr) Wide range of operation junction temperature Target Applications Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0120065J-TR - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120065J-TR
Silicon Carbide MOSFETs C3M0120065J-TR
Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density. Features 3rd Generation (C3MTM) SiC MOSFET Technology Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Figures of Merit Low on-state resistance over temperature Low parasitic capacitances Robust and fast body diode with ultra-low reverse-recovery charge (Qrr) Wide range of operation junction temperature Target Applications Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters

Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mOhm 650 V SiC MOSFET. The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3MTM SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features

  • 3rd Generation (C3MTM) SiC MOSFET Technology
  • Superior overall system level efficiency
  • High frequency operation
  • Robust body diode with low reverse recovery charge
  • Kelvin Source connection to reduce parasitic inductance and switching losses
  • Industry standard packages that meet creepage and clearance requirements

Figures of Merit

  • Low on-state resistance over temperature
  • Low parasitic capacitances
  • Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
  • Wide range of operation junction temperature

Target Applications

  • Server Power Supplies
  • EV Charging Systems
  • Energy Storage Systems (UPS)
  • Solar (PV) Inverters
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0120065J-TRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065J-TRDKR-ND
Single FETs, MOSFETs 1697-C3M0120065J-TRDKR-ND
SIC, MOSFET, 120M, 650V, TO-263-

SIC, MOSFET, 120M, 650V, TO-263-

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120065J-TRCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065J-TRCT-ND
Single FETs, MOSFETs 1697-C3M0120065J-TRCT-ND
SIC, MOSFET, 120M, 650V, TO-263-

SIC, MOSFET, 120M, 650V, TO-263-

Buy Now Datasheet
Single FETs, MOSFETs - 1697-C3M0120065J-TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0120065J-TR-ND
Single FETs, MOSFETs 1697-C3M0120065J-TR-ND
SIC, MOSFET, 120M, 650V, TO-263-

SIC, MOSFET, 120M, 650V, TO-263-

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number C3M0120065J-TR 1697-C3M0120065J-TRDKR-ND
Product Name Silicon Carbide MOSFETs Single FETs, MOSFETs
rDS(on) 0.1200 ohms
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