Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single C3M0032120D

Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324436-C3M0032120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 283W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0032120D,16 97-C3M0032120D Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324436-C3M0032120D - Win Source Electronics
    Win Source Electronics
  • Silicon Carbide MOSFETs - C3M0032120D - Richardson RFPD
    Richardson RFPD
  • Single FETs, MOSFETs - 1697-C3M0032120D-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - C3M0032120D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 1.2Kv, 175Deg C, 283W Rohs Compliant Wolfspeed - 40AH1120 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0032120D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324436-C3M0032120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 283W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0032120D,16 97-C3M0032120D Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324436-C3M0032120D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324436-C3M0032120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324436-C3M0032120D
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324436-C3M0032120D Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Power Dissipation (Max): 283W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V Vgs (Max): +15V, -4V Temperature Range - Operating: -40°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: -3312-C3M0032120D,16 97-C3M0032120D Base Product Number: C3M0032120 Drive Voltage (Max Rds On, Min Rds On): 15V RoHS Status: ROHS3 Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324436-C3M0032120D
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Power Dissipation (Max): 283W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3357 pF @ 1000 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0032120D,1697-C3M0032120D
Base Product Number: C3M0032120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Silicon Carbide MOSFETs - C3M0032120D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0032120D
Silicon Carbide MOSFETs C3M0032120D
Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Features Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode) Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C] Easy to implement – MOSFET fully on at +15V gate drive High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Applications Solar energy systems EV-Charging Uninterruptible power supply (UPS) SMPS Motor Control and Drives Energy storage

Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. The new family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature. Wolfspeed has designed 3rd generation MOSFETs with increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

Features

  • Proven and reliable 3rd generation planar MOSFET with rugged intrinsic Body Diode (no need for external diode)
  • Minimum of 1200V Vbr across entire operating temperature range [-40C – 175C]
  • Easy to implement – MOSFET fully on at +15V gate drive
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Applications

  • Solar energy systems
  • EV-Charging
  • Uninterruptible power supply (UPS)
  • SMPS
  • Motor Control and Drives
  • Energy storage
Supplier's Site Datasheet
Single FETs, MOSFETs - 1697-C3M0032120D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1697-C3M0032120D-ND
Single FETs, MOSFETs 1697-C3M0032120D-ND
N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-3

N-Channel 1200V 63A (Tc) 283W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - C3M0032120D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C3M0032120D
Single FETs, MOSFETs C3M0032120D
SICFET N-CH 1200V 63A TO247-3

SICFET N-CH 1200V 63A TO247-3

Supplier's Site Datasheet
Mosfet, N-Ch, 1.2Kv, 175Deg C, 283W Rohs Compliant Wolfspeed - 40AH1120 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 175Deg C, 283W Rohs Compliant Wolfspeed
40AH1120
Mosfet, N-Ch, 1.2Kv, 175Deg C, 283W Rohs Compliant Wolfspeed 40AH1120
MOSFET, N-CH, 1.2KV, 175DEG C, 283W ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 175DEG C, 283W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C3M0032120D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C3M0032120D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C3M0032120D
SICFET N-CH 1200V 63A TO247-3

SICFET N-CH 1200V 63A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics Richardson RFPD DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324436-C3M0032120D C3M0032120D 1697-C3M0032120D-ND C3M0032120D 40AH1120 C3M0032120D
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Silicon Carbide MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 175Deg C, 283W Rohs Compliant Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3 TO-247; TO-247-3
rDS(on) 0.0320 ohms
Transistor Technology / Material Silicon Carbide SiCFET (Silicon Carbide)
V(BR)DSS 1200 volts
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