Wolfspeed Silicon Carbide MOSFET Modules CAB003M09DM3

Description
Technical Features Ultra-Low Loss and Lightweight AlSiC Baseplate High Frequency Operation High Power Density Footprint High Junction Temperature (175 C) Operation Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost Applications E-Mobility Inverters EV Chargers High-Efficiency Converters / Inverters Renewable Energy
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Description
Technical Features Ultra-Low Loss and Lightweight AlSiC Baseplate High Frequency Operation High Power Density Footprint High Junction Temperature (175 C) Operation Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost Applications E-Mobility Inverters EV Chargers High-Efficiency Converters / Inverters Renewable Energy
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CAB003M09DM3 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CAB003M09DM3
Silicon Carbide MOSFET Modules CAB003M09DM3
Technical Features Ultra-Low Loss and Lightweight AlSiC Baseplate High Frequency Operation High Power Density Footprint High Junction Temperature (175 C) Operation Implements Wolfspeed’s Third Generation SiC MOSFET Technology Silicon Nitride Insulator System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost Applications E-Mobility Inverters EV Chargers High-Efficiency Converters / Inverters Renewable Energy

Technical Features

  • Ultra-Low Loss and Lightweight AlSiC Baseplate
  • High Frequency Operation
  • High Power Density Footprint
  • High Junction Temperature (175 C) Operation
  • Implements Wolfspeed’s Third Generation SiC MOSFET Technology
  • Silicon Nitride Insulator

System Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost

Applications

  • E-Mobility Inverters
  • EV Chargers
  • High-Efficiency Converters / Inverters
  • Renewable Energy
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CAB003M09DM3-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CAB003M09DM3-ND
FET, MOSFET Arrays 1697-CAB003M09DM3-ND
MOSFET 2N-CH 900V 518A MODULE

MOSFET 2N-CH 900V 518A MODULE

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Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number CAB003M09DM3 1697-CAB003M09DM3-ND
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays
Package Type 51.6 x 40.8 mm Module
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