Wolfspeed Silicon Carbide MOSFETs C3M0120065L

Description
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter Power Supplies Telecom Power Supplies Energy Storage Systems Solar (PV) inverters High Voltage DC/DC converters
Request a Quote Datasheet
Description
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter Power Supplies Telecom Power Supplies Energy Storage Systems Solar (PV) inverters High Voltage DC/DC converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFETs - C3M0120065L - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFETs
C3M0120065L
Silicon Carbide MOSFETs C3M0120065L
Silicon Carbide Power MOSFET C3MTMMOSFET Technology Features 3rd generation SiC MOSFET technology Optimized package with separate driver source pin High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency Applications Datacenter Power Supplies Telecom Power Supplies Energy Storage Systems Solar (PV) inverters High Voltage DC/DC converters

Silicon Carbide Power MOSFET
C3MTMMOSFET Technology

Features

  • 3rd generation SiC MOSFET technology
  • Optimized package with separate driver source pin
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant

Benefits

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Datacenter Power Supplies
  • Telecom Power Supplies
  • Energy Storage Systems
  • Solar (PV) inverters
  • High Voltage DC/DC converters
Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number C3M0120065L
Product Name Silicon Carbide MOSFETs
rDS(on) 0.1200 ohms
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