Semikron, Inc. Power IGBT Transistor SKM200GB12T4

Description
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
  • Power IGBT Transistor - SKM200GB12T4 - Richardson RFPD
    Richardson RFPD
  • Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3192 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - SKM200GB12T4 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
SKM200GB12T4
Power IGBT Transistor SKM200GB12T4
Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz

Fast IGBT4 Module|•IGBT4 = 4. Generation (Trench) IGBT|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Icnom|•Soft switching 4. Generation CAL diode (CAL4)|Typical Applications:|•AC inverter drives|•UPS|•Electronic welders at fsw up to 20 kHz

Supplier's Site Datasheet
Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron - 55X3192 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron
55X3192
Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron 55X3192
IGBT Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes

IGBT Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SKM200GB12T4 55X3192
Product Name Power IGBT Transistor Igbt Array & Module Transistor, Dual N Channel, 313 A, 1.8 V, 1.2 Kv, Module Rohs Compliant Semikron
Polarity N-Channel
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