The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module.
Features
SiC Power MOSFET: Low RDS(on), High temperature performance
SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
Kelvin source for easy drive
Low stray inductance
High level of integration
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low profile
RoHS compliant
Solderable terminals both for power and signal for easy PCB mounting
Applications
Uninterruptible power supplies
The MSCSM120TLM50C3AG device is a 1200V/55A three level inverter silicon carbide (SiC) MOSFET power module.
Features
- SiC Power MOSFET: Low RDS(on), High temperature performance
- SiC Schottky Diode (CR1 and CR2): Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
- Kelvin source for easy drive
- Low stray inductance
- High level of integration
- Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- Low profile
- RoHS compliant
- Solderable terminals both for power and signal for easy PCB mounting
Applications
- Uninterruptible power supplies
