Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
SIC 2N-CH 1200V 100A MODULE
MOSFET, DUAL N-CH, 1.2KV, 100A, MODULE; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2kV; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:900W RoHS Compliant: Yes
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QJD1210011 | QJD1210011 | 90W9554 |
| Product Name | Silicon Carbide MOSFET Modules | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type Powerex |
| Package Type | 56x110 | Module | TO-3 |
