Powerex, Inc. Silicon Carbide MOSFET Modules QJD1210011

Description
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
  • Silicon Carbide MOSFET Modules - QJD1210011 - Richardson RFPD
    Richardson RFPD
  • Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type Powerex - 90W9554 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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Suppliers

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Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - QJD1210011 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
QJD1210011
Silicon Carbide MOSFET Modules QJD1210011
Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency applications. Each module consists of two MOSFET Silicon Carbide Transistors with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QJD1210011
Discrete Semiconductor Products - Transistors - FETs, MOSFETs QJD1210011
SIC 2N-CH 1200V 100A MODULE

SIC 2N-CH 1200V 100A MODULE

Supplier's Site
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type Powerex - 90W9554 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type Powerex
90W9554
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type Powerex 90W9554
MOSFET, DUAL N-CH, 1.2KV, 100A, MODULE; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2kV; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:900W RoHS Compliant: Yes

MOSFET, DUAL N-CH, 1.2KV, 100A, MODULE; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2kV; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:900W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number QJD1210011 QJD1210011 90W9554
Product Name Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Channel Type Powerex
Package Type 56x110 Module TO-3
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