Microchip Technology, Inc. FET, MOSFET Arrays MSCSM70TLM05CAG

Description
Mosfet Array 4 N-Channel (Three Level Inverter) 700V 464A (Tc) 1277W (Tc) Chassis Mount SP6C
Request a Quote Datasheet
Description
Mosfet Array 4 N-Channel (Three Level Inverter) 700V 464A (Tc) 1277W (Tc) Chassis Mount SP6C
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 150-MSCSM70TLM05CAG-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
150-MSCSM70TLM05CAG-ND
FET, MOSFET Arrays 150-MSCSM70TLM05CAG-ND
Mosfet Array 4 N-Channel (Three Level Inverter) 700V 464A (Tc) 1277W (Tc) Chassis Mount SP6C

Mosfet Array 4 N-Channel (Three Level Inverter) 700V 464A (Tc) 1277W (Tc) Chassis Mount SP6C

Buy Now Datasheet
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
MSCSM70TLM05CAG
Silicon Carbide MOSFET Modules MSCSM70TLM05CAG
The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module. Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Low stray inductance M5 power connectors High level of integration Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Solar converter Uninterruptible power supplies

The MSCSM70TLM05CAG device is a 700V/464A, three level inverter silicon carbide (SiC) MOSFET power module.

Features

  • SiC Power MOSFET: Low RDS(on), High temperature performance
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Low stray inductance
  • M5 power connectors
  • High level of integration
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low profile
  • RoHS compliant

Applications

  • Solar converter
  • Uninterruptible power supplies
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MSCSM70TLM05CAG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MSCSM70TLM05CAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MSCSM70TLM05CAG
SIC 4N-CH 700V 464A SP6C

SIC 4N-CH 700V 464A SP6C

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 150-MSCSM70TLM05CAG-ND MSCSM70TLM05CAG MSCSM70TLM05CAG
Product Name FET, MOSFET Arrays Silicon Carbide MOSFET Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type Module SP6C
Unlock Full Specs
to access all available technical data