IGBT Module. VCE(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file no. E63532
TRANSISTOR; Continuous Collector Current:890A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:-; Operating Temperature Max:175°C; IGBT Termination:Stud; Collector Emitter Voltage Max:940mV; Product Range:- RoHS Compliant: Yes
| Richardson RFPD | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors |
| Product Number | SKM600GA12V | 77R2591 |
| Product Name | Power IGBT Transistor | Transistor; Continuous Collector Current Semikron |
| Transistor Type | Transistor; Continuous Collector Current Semikron |
