Microchip Technology, Inc. Silicon Carbide MOSFET Modules MSCSM70VR1M07CT6AG

Features SiC Power MOSFET: Low RDS(on), High temperature performance SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance M5 power connectors Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low profile RoHS compliant Applications Power factor correction Switched mode power supplies Uninterruptible power supplies

MOSFET 2N-CH 700V 349A